SMD Type
PNP Medium Frequency Transistor
BF550
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Low voltage (max. 40 V).
1
2
+0.1
1.3
-0.1
Low current (max. 25 mA).
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
R
amb
R
th j-a
Rating
-40
-40
-4
-25
-25
250
-65 to +150
150
-65 to +150
500
K/W
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base to emitter voltage
Feedback capacitance
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
Testconditons
I
E
= 0; Vc
B
= -30 V
Ic = 0; V
EB
= -3 V
Ic = -1 mA; Vc
E
= -10 V
Ic = -1 mA; Vc
E
= -10 V
Ic = -1 mA; Vc
B
= -10 V; f = 1 MHz
I
C
= -1 mA; V
CE
= -10 V; f = 100 MHz
50
750
0.5
325
mV
pF
MHz
Min
Typ
Max
-50
-100
Unit
nA
nA
Marking
Marking
LA
0-0.1
www.kexin.com.cn
1
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
