Advance Information
PE42672 DIE
SP7T UltraCMOS™ 2.75 V Switch
100 – 3000 MHz, +68 dBM IIP3
Figure 1. Functional Diagram
Features
•
Dedicated TX1 port for WCDMA, TX2
•
WCDMA
TX1
RX1
•
GSM/EDGE
TX2
RX2
•
•
•
GSM/EDGE
TX3
RX3
RX4
CMOS
Control/Driver
and ESD
V1
V2
V3
•
•
•
and TX3 ports for GSM/EDGE
Three pin CMOS logic control with
integral decoder/driver
Exceptional harmonic performance:
2f
o
= -84 dBc and 3f
o
= -77 dBc
Low TX insertion loss: 0.50 dB at
900 MHz, 0.70 dB at 1900 MHz
TX – RX Isolation of 44 dB at 900 MHz,
38 dB at 1900 MHz
1500 V HBM ESD tolerance all ports
+68 dBm IIP3
-111 dBm IMD3
No blocking capacitors required
Product Description
Figure 2. Die Top View*
The PE42672 is a HaRP™-enhanced SP7T
RF Switch developed on the UltraCMOS™
process technology. It addresses the specific
design needs of the Quad-Band GSM Handset
Antenna Switch Module Market for use in
GSM/EDGE/PCS/DCS/WCDMA handsets.
The switch is comprised of three TX ports and
four RX ports. TX1 is designed for WCDMA
and TX2 and TX3 are designed for GSM/
EDGE. The four symmetric RX ports can be
used for GSM/EDGE/PCS RX. On-chip CMOS
decoder logic facilitates three-pin low voltage
CMOS control, while high ESD tolerance of
1500 V at all ports, no blocking capacitor
requirements, and on-chip SAW filter over-
voltage protection devices make this the
ultimate in integration and ruggedness.
Peregrine’s HaRP™ technology
enhancements deliver high linearity and
exceptional harmonics performance. It is an
innovative feature of the UltraCMOS™
process, providing performance superior to
GaAs with the economy and integration of
conventional CMOS.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 4
TX1
ANT
RX1
GND
GND
TX2
1206
µm
RX2
GND
RX3
GND
RX4
GND
GND
TX3
GND
GND V
DD
V3 GN
V2 V1 GND
1006
µm
* Dimensions shown are drawn die size.
Document No. 70-0197-01
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PE42672
Advance Information
Table 1. Target Electrical Specifications @ 25 °C, V
DD
= 2.75 V
Parameter
TX - Ant (850 / 900)
TX - Ant (1800 / 1900)
TX - Ant ( 2200 UMTS )
RX - Ant (850 / 900)
RX - Ant (1800 / 1900)
Port under test in on state
TX - RX (850 / 900)
TX - RX (1800 / 1900)
TX - TX (850 / 900)
TX - TX (1800 / 1900)
TX1 - RX (1900 / 2200)
TX 850 / 900 MHz, +35 dBm output power, 50
Ω
TX 1800 / 1900 MHz, +33 dBm output power, 50
Ω
TX 850 / 900 MHz, +35 dBm output power, 50
Ω
TX 1800 / 1900 MHz, +33 dBm output power, 50
Ω
Condition
Typ
0.5
0.7
0.8
0.8
1.0
20
44
38
29
23
37
-84
-80
-77
-73
-111
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dBm
Insertion loss
1
Return Loss
Isolation
2nd Harmonic
3rd Harmonic
IMD3 distortion at 2.14 GHz
TX1 Measured at 2.14 GHz at Ant port, input +20 dBm CW signal
at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
Note: 1. Insertion loss specified with optimal impedance matching.
Table 2. Operating Ranges
Parameter
Temperature range
V
DD
Supply Voltage
I
DD
Power Supply Current
(V
DD
= 2.75 V)
TX input power
(VSWR
≤
3:1)
2
Table 3. Absolute Maximum Ratings
Min
-40
2.65
2.75
13
Typ
Max
+85
2.85
50
+35
+20
1.4
0.4
Units
°C
V
µA
P
IN
(50
Ω)
dBm
dBm
V
V
V
ESD
ESD Voltage at ANT Port
(IEC 61000-4-2)
1700
V
Symbol
V
DD
V
I
T
ST
Parameter/Conditions
Power supply voltage
Voltage on any input
Storage temperature range
TX input power (50
Ω)
3,4
RX input power (50
Ω)
3,4
3,4
Symbol
T
OP
V
DD
I
DD
P
IN
P
IN
V
IH
V
IL
Min
-0.3
-0.3
-65
Max
4.0
V
DD
+ 0.3
+150
+38
Units
V
V
°C
dBm
+23
+35
1500
dBm
V
P
IN
(∞:1) TX input power (VSWR =
∞:1)
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
RX input power
2
(VSWR
=1:1)
Control Voltage High
Control Voltage Low
Note: 2. Assumes RF input period of 4620
µs
and duty cycle of 50%.
Note: 3. Assumes RF input period of 4620
µs
and duty cycle of 50%.
4. V
DD
within operating range specified in Table 2.
Part performance is not guaranteed under these
conditions. Exposure to absolute maximum
conditions for extended periods of time may
adversely affect reliability. Stresses in excess of
absolute maximum ratings may cause permanent
damage.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 4
Document No. 70-0197-01
│
UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet
PE42672
Advance Information
Table 4. Pin Descriptions
Pin No.
1
2
6
Figure 3. Pad Configuration (Top View)
ANT
TX1
Pin Name
ANT
TX1
GND
TX2
GND
TX3
GND
GND
V
DD
V3
GND
V2
V1
GND
GND
RX4
GND
RX3
GND
RX2
GND
RX1
Description
RF Common – Antenna
2
1
22
21
RX1
GND
RX2
GND
RX3
GND
RX4
GND
RF I/O - TX1
Ground (Requires two bond wires)
RF I/O – TX2
Ground
RF I/O – TX3
Ground
Ground
Supply
Switch control input, CMOS logic level
Ground
Switch control input, CMOS logic level
Switch control input, CMOS logic level
Ground
Ground
RF I/O – RX4
Ground
RF I/O – RX3
Ground
RF I/O – RX2
Ground
RF I/O – RX1
GND
6
8
9
10
11
12 13
3
5
4
6
5
5
6
5
7
5
8
5
9
10
11
5
12
13
14
5
GND
TX2
GND
TX3
GND
3
4
20
19
5
6
PE42672
Die
18
17
16
15
7
14
V3
GND
V2
V1
Table 5. Truth Table
Path
RX1 - ANT
RX2 - ANT
RX3 - ANT
RX4 - ANT
TX1 - ANT
TX2 - ANT
TX3 - ANT
All Off
V1
0
1
0
1
0
1
0
1
V2
0
0
1
1
0
0
1
1
V3
0
0
0
0
1
1
1
1
15
5
16
6
17
5
18
6
19
5
20
6
21
5
22
6
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Notes: 5. Bond wires should be physically short and connected to
ground plane for best performance.
6. Blocking capacitors needed only when non-zero DC
voltage present.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 6. Ordering Information
Order Code
42672-90
42672-99
42672-00
Description
PE42672-DIE-D
PE42672-DIE-400G
PE42672-DIE-1H
Package
Film Frame
Waffle Pack
Evaluation Kit
Shipping Method
Wafer (Gross Die / Wafer Quantity)
400 Dice / Waffle Pack
1/ box
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©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 4
GND
V
DD
PE42672
Advance Information
Sales Offices
The Americas
Peregrine Semiconductor Corp.
9450 Carroll Park Drive
San Diego, CA 92121
Tel 858-731-9400
Fax 858-731-9499
North Asia Pacific
Peregrine Semiconductor K.K.
5A-5, 5F Imperial Tower
1-1-1 Uchisaiwaicho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Europe
Peregrine Semiconductor Europe
Commercial Products:
Bâtiment Maine
13-15 rue des Quatre Vents
F- 92380 Garches, France
Tel: +33-1-47-41-91-73
Fax : +33-1-47-41-91-73
Space and Defense Products:
180 Rue Jean de Guiramand
13852 Aix-En-Provence cedex 3, France
Tel: +33(0) 4 4239 3361
Fax: +33(0) 4 4239 7227
South Asia Pacific
Peregrine Semiconductor
28G, Times Square,
No. 500 Zhangyang Road,
Shanghai, 200122, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
For a list of representatives in your area, please refer to our Web site at:
www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS and HaRP are trademarks of Peregrine
Semiconductor Corp.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 4
Document No. 70-0197-01
│
UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet
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