SMD Type
Complementary Power Transistors
MJD41C(NPN)
MJD42C(PNP)
Transistors
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Monolithic Construction With Built?in Base ? Emitter Resistors
Pb-Free Packages are Available
+0.15
6.50
-0.15
+0.2
5.30
-0.2
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Total Device Dissipation FR-5 Board
@T
A
= 25
Derate above 25
Total Device Dissipation Alumina Substrate
@T
A
= 25
Derate above 25
Junction temperature
Storage temperature
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
V
CEO
V
CB
V
EB
I
C
I
CP
I
B
P
D
Rating
100
100
5
6
10
2
20
0.16
1.75
0.014
150
-65 to +150
6.25
71.4
/W
/W
Unit
V
V
V
A
A
A
W
W/
W
W/
P
D
T
j
T
stg
R
èJC
R
èJA
3
.8
0
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1
SMD Type
MJD41C(NPN)
MJD42C(PNP)
Electrical Characteristics Ta = 25
Parameter
Collector-emitter sustaining voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product *2
Small-signal current gain
*1 Pulse test: pulse width
*2 f
T
= h
fe
f
test
300 ìs, duty cycle
2.0%.
Symbol
Testconditons
Transistors
Min
100
Typ
Max
Unit
V
V
CEo(sus)
I
C
= 30 mA, I
B
= 0
I
CEO
I
CES
I
EBO
h
FE
V
CE
= 60 V, I
B
= 0
V
CE
= 100 V,V
EB
= 0
V
BE
= 5V, I
C
= 0
I
C
= 0.3 A, V
CE
= 4 V
I
C
= 3 A, V
CE
= 4 V
V
CE(
sat) I
C
= 6 A, I
B
= 600 mA
V
BE(on
) I
C
= 6 A, V
CE
= 4 V
f
T
h
fe
I
C
= 500 mA,V
CE
= 10 V,f
test
= 1 MHz
I
C
= 0.5 A, V
CE
= 10 V, f = 1 kHz
50
10
0.5
30
15
75
1.5
2
3
20
ìA
ìA
mA
V
V
MHz
h
FE
Classification
TYPE
Marking
MJD41C
J41C
MJD42C
J42C
2
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