SMD Type
High Voltage Transistor
FMMT596
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
SOT23 PNP silicon planar
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
-220
-200
-5
-1
-0.3
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
+0.1
0.38
-0.1
0-0.1
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1
SMD Type
FMMT596
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector-Emitter Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=-100ìA
V
(BR)CEO
I
C
=-10mA
V
(BR)EBO
I
E
=-100ìA
I
CBO
I
CES
I
EBO
V
CE(
sat)
V
CB
=-200V
V
CE
=-200V
V
EB
=-4V
I
C
=-100mA, I
B
=-10mA
I
C
=-250mA, I
B
=-25mA
V
BE(
sat) I
C
=-250mA, I
B
=-25mA
V
BE(ON)
I
C
=-250mA,V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
Static Forward Current Transfer Ratio
h
FE
I
C
=-100mA,V
CE
=-10V*
I
C
=-250mA,V
CE
=-10V*
I
C
=-400mA,V
CE
=-10V*
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
f
T
C
obo
I
C
=-50mA,V
CE
=-10V,f=100MHz
V
CB
=-10V,f=1MHz
Testconditons
Transistors
Min
-220
-200
-5
Typ
Max
Unit
V
V
V
-100
-100
-100
-0.2
-0.35
-1.0
-0.9
100
100
85
35
150
10
300
nA
nA
nA
V
V
V
V
MHz
pF
Marking
Marking
596
2
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