SMD Type
High Voltage Transistor
FMMT458
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
400 Volt V
CEO
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
400
400
5
1
225
200
500
-55 to +150
Unit
V
V
V
A
mA
mA
mW
+0.1
0.38
-0.1
0-0.1
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1
SMD Type
FMMT458
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Symbol
V
(BR)CBO
I
C
=100ìA
V
(BR)CEO
I
C
=10mA
V
(BR)EBO
I
E
=100ìA
I
CBO
I
CES
I
EBO
V
CE(
sat)
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA,I
B
=2mA
I
C
=50mA,I
B
=6mA
V
BE(
sat) I
C
=50mA,I
B
=5mA
V
BE(
on) I
C
=50mA,V
CE
=10V
I
C
=1mA, V
CE
=10V
Static Forward Current Transfer Ratio
h
FE
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition frequency
Output capacitance
Switching times
f
T
C
obo
ton
toff
I
C
=10mA,V
CE
=20V,f=20MHz
V
CB
=20V, f=1MHz
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
Testconditons
Transistors
Min
400
400
5
Typ
Max
Unit
V
V
V
100
100
100
0.2
0.5
0.9
0.9
100
100
15
50
5
135
2260
300
nA
nA
nA
V
V
V
V
MHz
pF
ns
ns
Marking
Marking
458
2
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