SMD Type
NPN High-Voltage Transistor
BF820W
Transistors
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak collector current
Peak base current
Total power dissipation * T
amb
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
25
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th j-a
Rating
300
300
5
50
100
50
200
-65 to +150
150
-65 to +150
625
K/W
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Feedback capacitance
Transition frequency
* Pulse test: tp
300 ìs; ä
0.02.
Symbol
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
Testconditons
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; Tj = 150
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA
I
C
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f=100MHz
60
50
600
1.6
mV
pF
MHz
Min
Typ
Max
10
10
50
Unit
nA
ìA
nA
Marking
Marking
1V
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