SMD Type
Transistors
High Voltage High Performance Transistor
FMMT497
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
SOT23 NPN silicon planar
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
Rating
300
300
5
500
1
200
500
-55 to +150
Unit
V
V
V
mA
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=100ìA
V
(BR)CEO
I
C
=10mA
V
(BR)EBO
I
E
=100ìA
I
CBO
I
CES
I
EBO
V
CE(
sat)
V
CB
=250V
V
CE
=250V
V
EB
=4V
I
C
=100mA,I
B
=10mA
I
C
=250mA,I
B
=25mA
Testconditons
Min
300
300
5
100
100
100
0.2
0.3
1.0
1.0
100
80
20
75
5
MHz
pF
300
Typ
Max
Unit
V
V
V
nA
nA
nA
V
V
V
V
BE(
sat) I
C
=250mA,I
B
=25mA
V
BE(ON)
I
C
=250mA,V
CE
=10V
I
C
=1mA, V
CE
=10V
Static Forward Current Transfer Ratio
h
FE
I
C
=100mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
Transition Frequency
Collector-Base Breakdown Voltage
* Pulse test: tp = 300 ìs; d
0.02.
f
T
C
obo
I
C
=50mA,V
CE
=10V,f=100MHz
V
CB
=10V,f=1MHz
Marking
Marking
497
+0.1
0.38
-0.1
0-0.1
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