PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs
designed for ultra-linear GSM/EDGE power amplifier applications in
the 920 to 960 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA091201E
Package H-36248-2
PTFA091201F
Package H-37248-2
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 959.8 MHz
Features
•
•
Thermally-enhanced packages
Broadband internal matching
Typical EDGE performance
- Average output power = 50 W
- Gain = 19.0 dB
- Efficiency = 44%
Typical CW performance
- Output power at P–1dB = 135 W
- Gain = 18.0 dB
- Efficiency = 64%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Pb-free and RoHS compliant
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
120 W (CW) output power
0
55
50
•
Modulation Spectrum (dBc)
-10
-20
-30
-40
-50
-60
-70
-80
-90
36
38
40
42
44
46
48
50
Efficiency
Drain Efficiency (%)
45
40
35
•
400 kHz
30
25
20
•
•
•
•
600 kHz
15
10
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 50 W, ƒ = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.5
–62
–74
19
44
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-11-19
PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two–tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18
45
—
Typ
19
48
–31
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 750 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 120 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
427
2.44
–40 to +150
0.41
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
(see pages 9 and 10 for further information)
Type and Version
PTFA091201E
PTFA091201F
V4
V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA091201E
PTFA091201F
Data Sheet
2 of 10
Rev. 03, 2007-11-19
PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
CW Sweep in a Broadband Test Fixture
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 50.79 dBm
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 750 mA, ƒ
1
= 959 MHz, ƒ
2
= 960 MHz
Efficiency
20
60
Efficiency (%)
21
70
-10
-20
-30
Gain (dB)
19
18
17
50
-15
40
-25
30
IMD (dBc)
Gain
3rd Order
-40
-50
-60
-70
37
39
41
43
45
47
49
Return Loss (dB)
5th
7th
16
900
Return Loss
910
920 930
940
950 960
970
-35
20
980
Frequency (MHz)
Output Power, Avg. (dBm)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ
1
= 959, ƒ
2
= 960 MHz,
series show I
DQ
-20
-25
-30
Power Sweep
V
DD
= 28 V, ƒ = 960 MHz
20.5
I
DQ
= 1125 mA
20.0
Power Gain (dB)
IMD (dBc)
-35
-40
-45
-50
-55
-60
37
525 mA
750 mA
19.5
19.0
18.5
18.0
17.5
I
DQ
= 750 mA
I
DQ
= 375 mA
940 mA
39
41
43
45
47
49
40
42
44
46
48
50
52
Output Power, Avg. (dBm)
Output Power (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 10
Rev. 03, 2007-11-19
PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 959.8 MHz
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 960 MHz
9
8
90
80
20
19
70
60
50
40
30
20
EVM RMS (average %)
.
Drain Efficiency (%)
6
5
4
3
2
1
0
36
38
40
42
44
46
48
50
60
18
Efficiency
50
40
30
17
16
15
EVM
20
10
0
Efficiency
14
40
43
46
49
52
10
Output Power, Avg. (dBm)
Output Power (dBm)
Frequency Sweep at P–1dB
V
DD
= 28 V, I
DQ
= 750 mA
Output Power (P–1 dB) vs. Supply Voltage
I
DQ
= 750 mA, ƒ = 960 MHz
20
70
65
60
55
50
45
960
52.5
Output Power (dBm)
19
Efficiency (%), P
OUT
(dBm)
Efficiency
52.0
51.5
51.0
50.5
50.0
49.5
24
26
28
30
32
Gain (dB)
18
17
16
15
900
Gain
Output Power
910
920
930
940
950
Frequency (MHz)
Supply Voltage (V)
Data Sheet
4 of 10
Rev. 03, 2007-11-19
Drain Efficiency (%)
7
70
Gain
Gain (dB)
PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
-10
1.03
0.4 A
1.2 A
3.0 A
6.0 A
9.0 A
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 960 MHz
T
CASE
= 25°C
T
CASE
= 90°C
40
35
Adjacent Channel Power
Ratio (dBc)
-20
-30
-40
Normalized Bias Voltage (V)
Efficiency
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
Drain Efficiency (%)
30
25
20
15
10
5
32
34
36
38
40
42
44
46
Adj 750 kHz
-50
-60
Alt1 1.98 MHz
-70
-80
0
20
40
60
80
100
Output Power, Avg. (dBm)
Case Temperature (°C)
Broadband Circuit Impedance
Frequency
D
Z Source
Ω
R
5.86
5.84
5.85
5.82
5.79
jX
–0.32
–0.27
–0.02
0.10
0.27
Z Load
Ω
R
2.20
2.17
2.16
2.15
2.13
jX
0.69
0.69
0.85
0.92
1.02
Z
0
= 50
Ω
Z Source
Z Load
MHz
920
930
940
950
G
S
960
-
W
AV
E
LE
NGT
H
S T
OW
A RD
G
960 MHz
0
.0
0.1
ARD
LOA
D
-
HS
T
OW
0.2
0.3
0.4
920 MHz
920 MHz
Data Sheet
5 of 10
0.5
0.1
Z Load
Z Source
960 MHz
Rev. 03, 2007-11-19
Microchip MCU
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