Advanced Information
Features
Description
The UL634H256 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The UL634H256 is a fast static
RAM (45 and 55 ns), with a nonvo-
latile electrically erasable PROM
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM.
Data transfers from the SRAM to
the EEPROM (the STORE opera-
tion) take place automatically upon
power down using charge stored in
an external 100
µF
capacitor.
Transfers from the EEPROM to the
SRAM (the RECALL operation)
UL634H256
Low Voltage
PowerStore
32K x 8 nvSRAM
take place automatically on power
up. The UL634H256 combines the
high performance and ease of use
of a fast SRAM with nonvolatile data
integrity.
STORE cycles also may be initiated
under user control via a software
sequence or via a single pin (HSB).
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or write
accesses intervene in the sequence
or the sequence will be aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvolatile
information is transferred into the
SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
High-performance CMOS non-
volatile static RAM 32768 x 8 bits
45 and 55 ns Access Times
20 and 25 ns Output Enable
Access Times
I
CC
= 8 mA at 200 ns Cycle Time
Automatic STORE to EEPROM
on Power Down using external
capacitor
Software initiated STORE
Automatic STORE Timing
10
5
STORE cycles to EEPROM
10 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from
EEPROM
Wide voltage range: 2.7 ... 3.6 V
Operating temperature ranges:
0 to 70
°C
-40 to 85
°C
CECC 90000 Quality Standard
ESD characterization according
MIL STD 883C M3015.7-HBM
Packages: SOP32 (300 mil)
TSOP32 (Type I)
Pin Configuration
Pin Description
VCAP
A14
A12
A7
A6
A5
A4
A3
n.c.
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCCX
HSB
W
A13
A8
A9
A11
G
n.c.
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
G
A11
A9
A8
A13
W
HSB
VCCX
VCAP
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
n.c.
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
n.c.
Signal Name
A0 - A14
DQ0 - DQ7
E
G
W
VCCX
VSS
VCAP
HSB
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
Capacitor
Hardware Controlled Store/Busy
Top View
Top View
December 12, 1997
257
UL634H256
Block Diagram
A5
A6
A7
A8
A9
A11
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Input Buffers
Advanced Information
EEPROM Array
512 x (64 x 8)
STORE
Row Decoder
SRAM
Array
512 Rows x
64 x 8 Columns
Store/
Recall
Control
V
CCX
V
SS
V
CA P
Power
Control
RECALL
V
CCX
V
CA P
HSB
Column I/O
Column Decoder
Software
Detect
A0 - A13
A0 A1 A2 A3 A4 A10
G
E
W
Truth Table for SRAM Operations
Operating Mode
Standby/not selected
Internal Read
Read
Write
*
H or L
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured
±
200 mV from steady-state voltage.
E
H
L
L
L
HSB
H
H
H
H
W
*
H
H
L
G
*
H
L
*
DQ0 - DQ7
High-Z
High-Z
Data Outputs Low-Z
Data Inputs High-Z
Absolute Maximum Ratings
a
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
a:
Symbol
V
CC
V
I
V
O
P
D
C-Type
K-Type
T
a
T
stg
Min.
-0.5
-0.3
-0.3
Max.
4.6
V
CC
+0.5
V
CC
+0.5
1
Unit
V
V
V
W
°C
°C
°C
0
-40
-65
70
85
150
Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
258
December 12, 1997
Advanced Information
Recommended
Operating Conditions
Power Supply Voltage
b
Input Low Voltage
Input High Voltage
Symbol
V
CC
V
IL
V
IH
-2 V at Pulse Width
10 ns permitted
Conditions
Min.
2.7
-0.3
2.2
UL634H256
Max.
3.6
0.8
V
CC
+0.3
Unit
V
V
V
C-Type
DC Characteristics
Operating Supply Current
c
Symbol
I
CC1
V
CC
V
IL
V
IH
t
c
t
c
Average Supply Current during
STORE
c
I
CC2
V
CC
E
W
V
IL
V
IH
V
CC
V
IL
V
IH
V
CC
E
t
c
t
c
Operating Supply Current
at t
cR
= 200 ns
c
(Cycling CMOS Input Levels)
Standby Supply Curent
d
(Stable CMOS Input Levels)
I
CC3
V
CC
W
V
IL
V
IH
V
CC
E
V
IL
V
IH
Conditions
Min.
= 3.6 V
= 0.8 V
= 2.2 V
= 45 ns
= 55 ns
= 3.6 V
≤
0.2 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
= 2.7 V
= 0.2 V
≥
V
CC
-0.2 V
= 3.6 V
= V
IH
= 45 ns
= 55 ns
= 3.6 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
= 3.6 V
≥
V
CC
-0.2 V
≤
0.2 V
≥
V
CC
-0.2 V
9
8
8
35
30
3
Max.
K-Type
Unit
Min.
Max.
37
32
4
mA
mA
mA
Average Supply Current during
PowerStore
Cycle
Standby Supply Current
d
(Cycling TTL Input Levels)
I
CC4
2
2
mA
I
CC(SB)1
10
9
8
mA
mA
mA
I
CC(SB)
1
1
mA
b: V
CC
reference levels throughout this datasheet refer to V
CCX
if that is where the power supply connection is made, or V
CAP
if V
CCX
is con-
nected to ground.
c: I
CC1
and I
CC3
are depedent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current I
CC1
is measured for WRITE/READ - ratio of 1/2.
I
CC2
is the average current required for the duration of the STORE cycle (STORE Cycle Time).
d: Bringing E
≥
V
IH
will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current I
CC(SB)1
is measured for WRITE/READ - ratio of 1/2.
December 12, 1997
259
UL634H256
DC Characteristics
Symbol
V
CC
I
OH
I
OL
V
CC
V
OH
V
OL
V
CC
High
Low
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
I
OHZ
I
OLZ
I
IH
I
IL
V
IH
V
IL
V
CC
V
OH
V
OL
Conditions
Advanced Information
C-Type
Min.
Max.
K-Type
Unit
Min.
2.4
0.4
-2
2
2
0.4
-2
Max.
V
V
mA
mA
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
V
OH
V
OL
I
OH
I
OL
= 2.7 V
=-2 mA
= 2 mA
= 2.7 V
= 2.4 V
= 0.4 V
= 3.6 V
= 3.6 V
= 0V
= 3.6 V
= 3.6 V
= 0V
2.4
1
-1
-1
1
µA
µA
1
-1
-1
1
µA
µA
SRAM MEMORY OPERATIONS
Symbol
Alt.
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
ELQX
t
GLQX
t
AXQX
t
ELICCH
t
EHICCL
IEC
t
cR
t
a(A)
t
a(E)
t
a(G)
t
dis(E)
t
dis(G)
t
en(E)
t
en(G)
t
v(A)
t
PU
t
PD
5
0
3
0
45
Min.
45
45
45
20
15
15
5
0
3
0
55
45
Max.
Min.
55
55
55
25
20
20
55
Unit
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
No.
1
2
3
4
5
6
7
8
9
10
11
Switching Characteristics
Read Cycle
Read Cycle Time
f
Address Access Time to Data Valid
g
Chip Enable Access Time to Data Valid
Output Enable Access Time to Data Valid
E HIGH to Output in High-Z
h
G HIGH to Output in High-Z
h
E LOW to Output in Low-Z
G LOW to Output in Low-Z
Output Hold Time after Address Change
Chip Enable to Power Active
e
Chip Disable to Power Standby
d, e
e:
f:
g:
h:
Parameter guaranteed but not tested.
Device is continuously selected with E and G both LOW.
Address valid prior to or coincident with E transition LOW.
Measured
±
200 mV from steady state output voltage.
260
December 12, 1997
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
