TECHNICAL DATA
IN74HCT244A
Octal 3-State Noninverting
Buffer/Line Driver/Line Receiver
High-Performance Silicon-Gate CMOS
The IN74HCT244A is identical in pinout to the LS/ALS244. The de-
vice may be used as a level converter for interfacing TTL or NMOS out-
puts to High-Speed CMOS inputs.
The IN74HCT244A is an octal noninverting buffer/line driver/line re-
ceiver designed to be used with 3-state memory address drivers, clock driv-
ers, and other bus-oriented systems. The device has non-inverted outputs
and two active-low output enables.
•
TTL/NMOS-Compatible Input Levels
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 4.5 to 5.5 V
•
Low Input Current: 1.0
µA
ORDERING INFORMATION
IN74HCT244AN
Plastic
IN74HCT244ADW SOIC
T
A
= -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Inputs
Enable A,
Enable B
PIN 20=V
CC
PIN 10 = GND
L
L
H
A,B
L
H
X
Outputs
YA,YB
L
H
Z
X=don’t care;Z = high impedance
Rev. 00
IN74HCT244A
MAXIMUM RATINGS
*
Symbol
V
CC
V
IN
V
OUT
I
IN
I
OUT
I
CC
P
D
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air, Plastic DIP
**
SOIC Package
**
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +7.0
-1.5 to V
CC
+1.5
-0.5 to V
CC
+0.5
±20
±35
±75
750
500
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**
Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
, V
OUT
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time (Figure 1)
Min
4.5
0
-55
0
Max
5.5
V
CC
+125
500
Unit
V
V
°C
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND≤(V
IN
or
V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
Rev. 00
IN74HCT244A
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
V
CC
V
Guaranteed Limit
25
°C
to
-55°C
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
0.1
≤85
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.84
0.1
0.1
0.33
1.0
≤125
°C
2.0
2.0
0.8
0.8
4.4
5.4
3.7
0.1
0.1
0.4
1.0
µA
V
V
V
V
Unit
V
IH
V
IL
V
OH
Minimum High-
Level Input Voltage
Maximum Low -
Level Input Voltage
Minimum High-
Level Output Voltage
V
OUT
= V
CC
-0.1 V
⎢I
OUT
⎢≤
20
µA
V
OUT
=0.1 V
⎢I
OUT
⎢ ≤
20
µA
V
IN
=V
IH
⎢I
OUT
⎢ ≤
20
µA
V
IN
=V
IH
⎢I
OUT
⎢ ≤
6.0 mA
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
V
OL
Maximum Low-
Level Output Voltage
V
IN
= V
IL
⎢I
OUT
⎢ ≤
20
µA
V
IN
= V
IL
⎢I
OUT
⎢ ≤6.0
mA
I
IH
Minimum High-
Level Input Leakage
Current
Maximum Low-
Level Input Leakage
Current
Minimum High-
Level Three-State
Leakage Current
V
IN
=V
CC
I
IL
V
IN
=GND
5.5
-0.1
-1.0
-1.0
µA
I
OZH
V
IN
(01) =V
IH
V
IN
(19) =V
IH
V
IN
=V
СС
(on other out-
puts)
V
OUT
=V
CC
V
IN
(01) =V
IH
V
IN
(19) =V
IH
V
IN
=V
СС
(on other out-
puts)
V
OUT
=GND
V
IL
=GND
V
IN
=V
CC
I
OUT
=0 µA
V
IN
=2.4 V, Any One Input
V
IN
=V
CC
or GND, Other
Inputs
I
OUT
=0µA
5.5
0.5
5.0
10.0
µA
I
OZL
Maximum Low-
Level Three-State
Leakage Current
5.5
-0.5
-5.0
-10.0
µA
I
CC
Maximum Quiescent
Supply Current
per Package)
Additional Quiescent
Supply Current
5.5
4.0
40
160
µA
∆I
CC
≥-55°C
25°C to 125°C
mA
5.5
2.9
2.4
NOTE: Total Supply Current = I
CC
+
Σ∆I
CC
.
Rev. 00
IN74HCT244A
AC ELECTRICAL CHARACTERISTICS
(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Symbol
Parameter
Test Conditions
V
CC
В
Guaranteed Limit
25
°C
to
-55°C
20
≤85°C
≤125°
C
30
ns
Unit
t
PLH
, t
PHL
Maximum Propagation De-
lay, A to YA or B to YB
(Figures 1 and 2)
V
CC
=5 V±10%
V
IL
=0 V
V
IH
=3 V
t
LH
=t
HL
=6 ns
C
L
=50 pF
V
CC
=5 V±10%
V
IL
=0 V
V
IH
=3 V
t
LH
=t
HL
=6 ns
C
L
=50 pF
V
CC
=5 V±10%
V
IL
=0 V
V
IH
=3 V
t
LH
=t
HL
=6 ns
C
L
=50 pF
V
CC
=5 V±10%
V
IL
=0 V
V
IH
=3 V
t
LH
=t
HL
=6 ns
C
L
=50 pF
V
CC
=5 V±10%
V
CC
=5 V±10%
5.0
25
t
PLZ
, t
PHZ
Maximum Propagation De-
lay , Output Enable to YA or
YB (Figures 1 and 2)
5.0
26
33
39
ns
t
PZL
, t
PZH
Maximum Propagation De-
lay , Output Enable to YA or
YB (Figures 1 and 2)
5.0
22
28
33
ns
t
TLH
, t
THL
Maximum Output Transition
Time, Any Output (Figures
1 and 2)
5.0
12
15
18
ns
C
IN
C
OUT
Maximum Input Capacitance
Maximum Three-State Out-
put Capacitance (Output in
High-Impedance State)
5.0
5.0
10
15
10
15
10
15
pF
pF
Power Dissipation Capacitance (Per Enabled Output)
C
PD
Used to determine the no-load dynamic power consump-
tion:
P
D
=C
PD
V
CC2
f+I
CC
V
CC
Typical @25°C,V
CC
=5.0 V
55
pF
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
Rev. 00
IN74HCT244A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/8 of the Device)
Rev. 00
嵌入式系统
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