VSKDS409/150
www.vishay.com
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 200 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
ADD-A-PAK
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
PRODUCT SUMMARY
I
F(AV)
V
R
Package
Circuit
200 A
150 V
ADD-A-PAK
Two diodes doubler circuit
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
The VSKDS409/150 Schottky rectifier doubler module has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
200 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
200
150
20 000
0.85
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum static peak reverse voltage
SYMBOL
V
R
V
RRM
VSKDS409/150
150
UNITS
V
Revision: 07-Jun-13
Document Number: 94649
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKDS409/150
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
Maximum dynamic peak reverse voltage
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
V
AV
TEST CONDITIONS
50 % duty cycle at T
C
= 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
VALUES
200
20 000
2300
15
1
170
mJ
A
V
A
UNITS
T
J
= 25 °C, I
AS
= 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
T
J
= 25 °C, I
AS
= 1.8 A, L = 10 mH
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
200 A
Maximum forward voltage drop
V
FM
400 A
200 A
400 A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Maximum RMS insulation voltage
I
RM
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
1.03
1.33
0.85
1.13
6
85
6000
5.0
10 000
3000 (1 min)
3600 (1 s)
mA
pF
nH
V/μs
V
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
50 Hz
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
0.32
°C/W
0.1
75
2.7
4
Nm
3
TO-240AA compatible
g
oz.
UNITS
°C
Revision: 07-Jun-13
Document Number: 94649
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKDS409/150
www.vishay.com
Vishay Semiconductors
1000
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
1
T
J
= 75 °C
0.1
0.01
0.001
T
J
= 50 °C
T
J
= 25 °C
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
1.5
2.0
100
10
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
10
1
0.0
0.5
1.0
0
94649_02
25
50
75
100
125
150
94649_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
94649_03
20
40
60
80
100
120
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(thermal resistance)
0.001
0.0001
94649_04
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Revision: 07-Jun-13
Document Number: 94649
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKDS409/150
www.vishay.com
180
160
140
120
100
80
60
40
20
0
0
94649_05
Vishay Semiconductors
300
Allowable Case Temperature (°C)
Average Power Loss (W)
250
200
150
100
DC
50
0
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
RMS limit
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
100
200
300
400
500
0
94649_06
50
100
150
200
250
300
I
F(AV)
- Average Forward Current (A)
I
F(AV)
-
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
100 000
At any rated load condition
and with rated V
RRM
applied
following surge
10 000
1000
10
100
1000
10 000
94649_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 07-Jun-13
Document Number: 94649
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKDS409/150
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS
1
1
2
3
4
5
6
-
-
-
-
-
-
KD
2
S
3
40
4
9
5
/
150
6
Vishay Semiconductors product
Circuit configuration:
KD = ADD-A-PAK - 2 diodes in series
S = Schottky diode
Average current rating (40 = 400 A)
(1)
Product silicon identification
Voltage rating (150 = 150 V)
Note
(1)
For KD configuration average current rating per module is 200 A
CIRCUIT CONFIGURATION
(1)
~
(2)
+
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 07-Jun-13
Document Number: 94649
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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