PD - 9.871B
IRF7101
HEXFET
®
Power MOSFET
Adavanced Process Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
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Dynamic dv/dt Rating
l
Fast Switching
Description
l
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
V
DSS
= 20V
R
DS(on)
= 0.10Ω
I
D
= 3.5A
3
6
4
5
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
Max.
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max
62.5
Units
°C/W
8/25/97
IRF7101
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
1.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.025
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
10
24
30
4.0
6.0
320
250
75
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.10
V
GS
= 10V, I
D
= 1.8A
Ω
0.15
V
GS
= 4.5V, I
D
= 1.0A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 15V, I
D
= 3.5A
2.0
V
DS
= 20V, V
GS
= 0V
µA
250
V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
100
V
GS
= 12V
nA
-100
V
GS
= - 12V
15
I
D
= 1.8A
2.0
nC V
DS
= 16V
3.6
V
GS
= 10V
–––
V
DD
= 10V
–––
I
D
= 1.8A
ns
–––
R
G
= 8.2Ω
–––
R
D
= 26Ω
D
–––
nH
–––
–––
–––
–––
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
36
41
2.0
A
14
1.2
54
62
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
3.5A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
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