Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
N-Channel
V
DS
(V)
20
r
DS(on)
(W)
2.0 @ V
GS
= 4.5 V
2.5 @ V
GS
= 2.5 V
3.8 @ V
GS
=
−4.5
V
5.0 @ V
GS
=
−2.5
V
I
D
(mA)
250
150
−180
−100
P-Channel
P Channel
−20
20
SC-70 (6-Leads)
S
1
G
1
D
2
1
2
3
Top View
6
5
4
Marking Code
YY
Lot Traceability
and Date Code
Part # Code
D
1
G
2
S
2
RE
XX
SOT-363
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
N-Channel
20
"8
250
200
500
0.20
0.13
P-Channel
−20
"8
−180
−140
−500
Unit
V
mA
W
_C
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Symbol
R
thJA
Limit
625 (Total)
Unit
_C/W
Document Number: 71303
S-03840—Rev. B, 21-May-01
www.vishay.com
S
1
Si1501DL
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body
Gate Body Leakage
V
(BR)DSS
V
GS( h)
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 10
mA
V
GS
= 0 V, I
D
=
−10
mA
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= V
GS
, I
D
=
−50
mA
V
DS
= 0 V, V
GS
=
"8
V
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
−20
V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
=
−20
V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
2.5 V, V
GS
= 5.0 V
On-State
On State Drain Current
a
I
D( )
D(on)
V
DS
v
−2.5
V, V
GS
=
−5.0
V
V
DS
w
4.5 V, V
GS
= 8.0 V
V
DS
v
−4.5
V, V
GS
=
−8.0
V
V
GS
= 2.5 V, I
D
= 150 mA
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
=
−2.5
V, I
D
=
−75
mA
V
GS
= 4.5 V, I
D
= 250 mA
V
GS
=
−4.5
V, I
D
=
−180
mA
Forward Transconductance
a
Diode Forward Voltage
a
g
f
fs
V
SD
V
DS
= 2.5 V, I
D
= 50 mA
V
DS
=
−2.5
V, I
D
=
−
50 mA
I
S
= 50 mA, V
GS
= 0 V
I
S
=
−50
mA, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
120
−120
400
−400
1.6
4
1.2
2.6
150
200
0.7
−0.7
1.2
−1.2
2.5
5
2.0
3.8
mS
V
W
mA
20
−20
0.4
−0.4
24
−24
0.9
−0.9
"2
"2
0.001
−0.001
1.5
−1.5
"100
"100
100
−100
1
−1
mA
nA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source
Gate Source Charge
Gate-Drain
Gate Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
d
C
iiss
C
oss
C
rss
N-Ch
N-Channel
V
DS
= 5 V, V
GS
= 4.5 V, I
D
= 100 mA
P Channel
P-Channel
V
DS
=
−5
V, V
GS
=
−4.5
V I
D
=
−100
mA
V
V,
100 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DS
= 5 V, V
GS
= 0 V
P Channel
P-Channel
V
DS
=
−5
V V
GS
= 0 V
V,
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
300
300
25
25
100
100
15
15
11
11
5
5
pF
450
450
pC
Switching
Turn-On
Turn On Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
N-Channel
N Channel
V
DD
= 3 V, R
L
= 100
W
I
D
=
0.25 A, V
GEN
= 4.5 V, R
g
= 10
W
P Channel
P-Channel
V
DD
=
−3
V R
L
= 100
W
3 V,
I
D
= -0.25
A, V
GEN
=
−4.5
V, R
g
= 10
W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
7
25
25
19
19
9
9
12
12
35
35
30
30
15
15
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
www.vishay.com
Document Number: 71303
S-03840—Rev. B, 21-May-01
2
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.25
V
GS
= 3.5 thru 5 V
1.00
I
D
−
Drain Current (A)
3V
0.75
2.5 V
0.50
2V
0.25
1.5 V
0.00
0
1
2
3
V
DS
−
Drain-to-Source Voltage (V)
1V
4
I
D
−
Drain Current (A)
0.6
0.8
T
C
=
−55_C
25_C
N-CHANNEL
Transfer Characteristics
0.4
125_C
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
−
Gate-to-Source Voltage (V)
7
6
r
DS(on)
−
On-Resistance (
W
)
On-Resistance vs. Drain Current
50
Capacitance
40
5
4
3
V
GS
= 2.5 V
2
1
0
0
1
2
I
D
−
Drain Current (A)
3
4
V
GS
= 4.5 V
0
0
4
8
12
16
20
C
−
Capacitance (pF)
30
20
C
oss
10
C
rss
C
iss
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 100 mA
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 100 m A
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
300
400
500
600
8
1.4
1.2
4
1.0
2
0.8
0
0
100
200
Q
g
−
Total Gate Charge (pC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Document Number: 71303
S-03840—Rev. B, 21-May-01
www.vishay.com
S
3
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
3
1
I
S
−
Source Current (A)
T
J
= 125_C
r
DS(on)
−
On-Resistance (
W
)
6
8
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.1
I
D
= 250 mA
4
T
J
= 25_C
0.01
T
J
=
−55_C
2
0.001
0.00
0.3
0.6
0.9
1.2
V
SD
−
Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
Threshold Voltage
0.2
0.1
V
GS(th)
Variance (V)
−0.0
−0.1
−0.2
−0.3
−0.4
−50
I
D
= 50
mA
−25
0
25
50
75
100
125
150
T
J
−
Temperature (_C)
www.vishay.com
4
Document Number: 71303
S-03840—Rev. B, 21-May-01
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.2
1.0
4.5 V
I
D
−
Drain Current (A)
4V
3.5 V
3V
2.5 V
2V
0.0
0
1
2
3
4
V
DS
−
Drain-to-Source Voltage (V)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
−
Drain Current (A)
0.8
0.6
0.4
0.2
0.3
125_C
5V
0.5
T
C
=
−55_C
0.4
25_C
P-CHANNEL
Transfer Characteristics
0.2
0.1
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
45
Capacitance
r
DS(on)
−
On-Resistance (
W
)
C
−
Capacitance (pF)
6
36
4
V
GS
= 2.5 V
V
GS
= 4.5 V
27
C
iss
18
C
oss
9
C
rss
2
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 80 mA
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 180 m A
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
200
300
400
500
600
8
1.4
1.2
4
1.0
2
0.8
0
0
100
Q
g
−
Total Gate Charge (pC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Document Number: 71303
S-03840—Rev. B, 21-May-01
www.vishay.com
S
5
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