Si7445DP
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.0077 @ V
GS
= –4.5 V
–20
0.0094 @ V
GS
= –2.5 V
0.0125 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–19
–17
–15
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
Load Switch Battery Applications
PowerPAKt SO-8
S
6.15 mm
S
1
2
3
S
S
5.15 mm
G
G
4
D
8
7
6
5
D
D
D
D
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
–4.3
5.4
3.4
–55 to 150
–15
–50
–1.6
1.9
1.2
W
_C
–9
A
Symbol
V
DS
V
GS
10 secs
Steady State
–20
"8
Unit
V
–19
–12
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71626
S-03835—Rev. A, 28-May-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
_C/W
C/W
1
Si7445DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –19 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –17 A
V
GS
= –1.8 V, I
D
= –10 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –15 V, I
D
= –19 A
I
S
= –4.3 A, V
GS
= 0 V
–40
0.0064
0.0078
0.0105
75
–0.65
–1.1
0.0077
0.0094
0.0125
S
V
W
–0.45
"100
–1
–10
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –4.3 A, di/dt = 100 A/ms
V
DD
= –15 V, R
L
= 15
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –15 V, V
GS
= –5 V, I
D
= –19 A
92
19
16.5
2
40
45
400
190
50
60
65
600
290
80
ns
W
140
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 5 thru 2 V
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
40
50
Transfer Characteristics
30
1.5 V
20
30
20
T
C
= 125_C
10
25_C
–55_C
10
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71626
S-03835—Rev. A, 28-May-01
2
Si7445DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020
15000
Vishay Siliconix
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.016
C – Capacitance (pF)
12000
C
iss
0.012
V
GS
= 1.8 V
V
GS
= 2.5 V
9000
0.008
V
GS
= 4.5 V
0.004
6000
3000
C
oss
C
rss
0
4
8
12
16
20
0.000
0
5
10
15
20
25
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 19 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 19 A
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
1.2
2
1.0
1
0.8
0
0
20
40
60
80
100
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.030
50
0.024
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
T
J
= 150_C
10
I
D
= 19 A
0.018
0.012
T
J
= 25_C
0.006
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71626
S-03835—Rev. A, 28-May-01
www.vishay.com
3
Si7445DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
I
D
= 250
mA
0.4
V
GS(th)
Variance (V)
160
200
Single Pulse Power, Juncion-To-Ambient
Power (W)
0.2
120
0.0
80
–0.2
40
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71626
S-03835—Rev. A, 28-May-01
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