DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
| 参数名称 | 属性值 |
| 零件包装代码 | BGA |
| 包装说明 | TFBGA, |
| 针数 | 78 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.255 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B78 |
| JESD-609代码 | e1 |
| 长度 | 10.6 mm |
| 内存密度 | 1073741824 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 78 |
| 字数 | 268435456 words |
| 字数代码 | 256000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | |
| 组织 | 256MX4 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TFBGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 1.575 V |
| 最小供电电压 (Vsup) | 1.425 V |
| 标称供电电压 (Vsup) | 1.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子面层 | TIN SILVER COPPER |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 宽度 | 7.5 mm |
| Base Number Matches | 1 |
| EDJ1104BFSE-DJ-F | EDJ1104BFSE-AE-F | EDJ1108BFSE-AE-F | EDJ1104BFSE-GN-F | |
|---|---|---|---|---|
| 描述 | DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 256MX4, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
| 零件包装代码 | BGA | BGA | BGA | BGA |
| 包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
| 针数 | 78 | 78 | 78 | 78 |
| Reach Compliance Code | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.255 ns | 0.3 ns | 0.3 ns | 0.225 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 |
| JESD-609代码 | e1 | e1 | e1 | e1 |
| 长度 | 10.6 mm | 10.6 mm | 10.6 mm | 10.6 mm |
| 内存密度 | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bi |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 4 | 4 | 8 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 78 | 78 | 78 | 78 |
| 字数 | 268435456 words | 268435456 words | 134217728 words | 268435456 words |
| 字数代码 | 256000000 | 256000000 | 128000000 | 256000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | 256MX4 | 256MX4 | 128MX8 | 256MX4 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.575 V | 1.575 V | 1.575 V | 1.575 V |
| 最小供电电压 (Vsup) | 1.425 V | 1.425 V | 1.425 V | 1.425 V |
| 标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
| 端子形式 | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm |
| Base Number Matches | 1 | 1 | 1 | - |
| 厂商名称 | - | ELPIDA | ELPIDA | ELPIDA |
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