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IDT70V3579S4BC

产品描述Dual-Port SRAM, 32KX36, 4.2ns, PBGA256, BGA-256
产品类别存储    存储   
文件大小172KB,共17页
制造商IDT (Integrated Device Technology)
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IDT70V3579S4BC概述

Dual-Port SRAM, 32KX36, 4.2ns, PBGA256, BGA-256

IDT70V3579S4BC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码BGA
包装说明LBGA,
针数256
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
最长访问时间4.2 ns
其他特性PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE
JESD-30 代码S-PBGA-B256
JESD-609代码e0
长度17 mm
内存密度1179648 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量256
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX36
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)225
认证状态Not Qualified
座面最大高度1.5 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度17 mm
Base Number Matches1

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HIGH-SPEED 3.3V 32K x 36
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
IDT70V3579S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 4.2/5/6ns (max.)
– Industrial: 5ns (max)
Pipelined output mode
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)
– Fast 4.2ns clock to data out
– 1.8ns setup to clock and 0.7ns hold on all control, data, and
address inputs @ 133MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, single 3.3V (±150mV) power supply for
core
LVTTL compatible, selectable 3.3V (±150mV)/2.5V (±125mV)
power supply for I/Os and control signals on each port
Industrial temperature range (-40°C to +85°C) is
available for selected speeds
Available in a 208-pin Plastic Quad Flatpack (PQFP) and
208-pin fine pitch Ball Grid Array, and 256-pin Ball Grid
Array
Green parts available, see ordering information
Functional Block Diagram
BE
3L
BE
3R
BE
2L
BE
1L
BE
0L
BE
2R
BE
1R
BE
0R
R/W
L
B
W
0
L
B
W
1
L
B B
WW
2 3
L L
B
W
3
R
BB
WW
2 1
RR
B
W
0
R
R/W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
OE
R
32K x 36
MEMORY
ARRAY
I/O
0L
- I/O
35L
Din_L
Din_R
I/O
0R
- I/O
35R
CLK
L
A
14L
A
0L
CNTRST
L
ADS
L
CNTEN
L
CLK
R
,
Counter/
Address
Reg.
A
14R
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
CNTRST
R
ADS
R
CNTEN
R
4830 tbl 01
OCTOBER 2008
1
©2008 Integrated Device Technology, Inc.
DSC 4830/16

IDT70V3579S4BC相似产品对比

IDT70V3579S4BC IDT70V3579S4BF IDT70V3579S4BF8 IDT70V3579S5BCGI IDT70V3579S4BC8 IDT70V3579S5BC8 IDT70V3579S4BCG IDT70V3579S4DR IDT70V3579S6DR
描述 Dual-Port SRAM, 32KX36, 4.2ns, PBGA256, BGA-256 Dual-Port SRAM, 32KX36, 4.2ns, CMOS, PBGA208, FINE PITCH, BGA-208 Dual-Port SRAM, 32KX36, 4.2ns, CMOS, PBGA208, FINE PITCH, BGA-208 Dual-Port SRAM, 32KX36, 5ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 32KX36, 4.2ns, CMOS, PBGA256, BGA-256 Dual-Port SRAM, 32KX36, 5ns, CMOS, PBGA256, BGA-256 Dual-Port SRAM, 32KX36, 4.2ns, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 32KX36, 4.2ns, CMOS, PQFP208, PLASTIC, QFP-208 Dual-Port SRAM, 32KX36, 6ns, CMOS, PQFP208, PLASTIC, QFP-208
是否无铅 含铅 含铅 含铅 不含铅 含铅 含铅 不含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 符合 不符合 不符合 符合 不符合 不符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA QFP QFP
包装说明 LBGA, TFBGA, BGA208,17X17,32 TFBGA, BGA208,17X17,32 LBGA, BGA256,16X16,40 LBGA, BGA256,16X16,40 LBGA, BGA256,16X16,40 LBGA, FQFP, QFP208,1.2SQ,20 FQFP, QFP208,1.2SQ,20
针数 256 208 208 256 256 256 256 208 208
Reach Compliance Code not_compliant not_compliant not_compliant compliant not_compliant not_compliant compliant not_compliant not_compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 4.2 ns 4.2 ns 4.2 ns 5 ns 4.2 ns 5 ns 4.2 ns 4.2 ns 6 ns
其他特性 PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE
JESD-30 代码 S-PBGA-B256 S-PBGA-B208 S-PBGA-B208 S-PBGA-B256 S-PBGA-B256 S-PBGA-B256 S-PBGA-B256 S-PQFP-G208 S-PQFP-G208
JESD-609代码 e0 e0 e0 e1 e0 e0 e1 e0 e0
长度 17 mm 15 mm 15 mm 17 mm 17 mm 17 mm 17 mm 28 mm 28 mm
内存密度 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 36 36 36 36 36 36 36 36 36
湿度敏感等级 3 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1 1
端子数量 256 208 208 256 256 256 256 208 208
字数 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000 32000 32000 32000 32000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 32KX36 32KX36 32KX36 32KX36 32KX36 32KX36 32KX36 32KX36 32KX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA TFBGA TFBGA LBGA LBGA LBGA LBGA FQFP FQFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE FLATPACK, FINE PITCH FLATPACK, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 225 225 260 225 225 260 225 225
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.5 mm 1.2 mm 1.2 mm 1.7 mm 1.5 mm 1.5 mm 1.7 mm 4.1 mm 4.1 mm
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn63Pb37) Tin/Lead (Sn63Pb37) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL BALL BALL BALL BALL BALL BALL GULL WING GULL WING
端子节距 1 mm 0.8 mm 0.8 mm 1 mm 1 mm 1 mm 1 mm 0.5 mm 0.5 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM QUAD QUAD
处于峰值回流温度下的最长时间 20 20 20 30 20 20 30 20 20
宽度 17 mm 15 mm 15 mm 17 mm 17 mm 17 mm 17 mm 28 mm 28 mm
Base Number Matches 1 1 1 1 1 1 1 1 -
厂商名称 - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - - IDT (Integrated Device Technology)
最大时钟频率 (fCLK) - 133 MHz 133 MHz 100 MHz 133 MHz 100 MHz - 133 MHz 83 MHz
I/O 类型 - COMMON COMMON COMMON COMMON COMMON - COMMON COMMON
端口数量 - 2 2 2 2 2 - 2 2
输出特性 - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE
封装等效代码 - BGA208,17X17,32 BGA208,17X17,32 BGA256,16X16,40 BGA256,16X16,40 BGA256,16X16,40 - QFP208,1.2SQ,20 QFP208,1.2SQ,20
电源 - 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V - 2.5/3.3,3.3 V 2.5/3.3,3.3 V
最小待机电流 - 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V - 3.15 V 3.15 V
最大压摆率 - 0.46 mA 0.46 mA 0.415 mA 0.46 mA 0.36 mA - 0.46 mA 0.31 mA
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