®
B
16A Triacs logic level
1
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
16
600, 700 and 800
10 to 50
Unit
A
V
BTA/BTB16 series
A2
G
A1
A2
mA
A1 A2
G
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T16 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
RMS on-state current
(full sine wave)
Parameter
D
2
PAK
(T16-G)
A2
A1
A2
G
A1
A2
G
TO-220AB
(BTB16)
TO-220AB Insulated
(BTA16)
Value
D2
²
PAK
TO-220AB
Tc = 100°C
Tc = 85°C
t = 16.7 ms
t = 20 ms
168
160
144
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
50
V
DRM
/V
RRM
+ 100
Unit
A
16
A
A
²
s
A/µs
V
A
W
°C
TO-220AB Ins.
I
TSM
I
²
t
dI/dt
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 60 Hz
F = 50 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
O
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
4
1
- 40 to + 150
- 40 to + 125
1/4
16A Triacs logic level
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
■
BTA/BTB16 series
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T16
T1635
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
MIN.
(dV/dt)c = 10 V/µs
Without snubber
I - III
II
MIN.
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
R
L
= 33
Ω
R
L
= 3.3 kΩ
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
-
-
8.5
15
25
30
40
8.5
3.0
-
35
SW
10
1.3
0.2
35
50
60
500
-
-
8.5
50
70
80
1000
-
-
14
V/µs
A/ms
BTA/BTB16
CW
35
BW
50
mA
V
V
mA
mA
Unit
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB16
C
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 3.3 kΩ
Tj = 125°C
R
L
= 33
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
60
120
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
(dV/dt)c (2) (dI/dt)c = 7 A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 22.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
25
5
2
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/4
16A Triacs logic level
OTHER INFORMATION
Part Number
BTA/BTB16-xxxyz
BTA/BTB16-xxxyzRG
T1635-xxxG
T1635-xxxG-TR
Marking
BTA/BTB16xxxyz
BTA/BTB16-xxxyz
T1635xxxG
T1635xxxG
Weight
2.3 g
2.3 g
1.5 g
1.5 g
Base
quantity
250
50
50
1000
Packing
mode
Bulk
Tube
Tube
Tape & reel
BTA/BTB16 series
Note:
xxx = voltage, y = sensitivity, z = type
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
Fig. 2-1:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
18
16
14
12
10
8
6
4
2
0
BTB/T16
20
18
16
14
12
10
8
6
4
2
0
BTA
IT(RMS) (A)
0
2
4
6
8
10
12
14
16
Tc(°C)
0
25
50
75
100
125
Fig. 2-2:
D²PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness: 35
µm),
full cycle.
IT(RMS) (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50
75
100
125
D PAK
2
(S=1cm )
2
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
Zth(j-a)
tp (s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
3/4
16A Triacs logic level
Fig. 4:
values)
ITM (A)
200
Tj max
BTA/BTB16 series
On-state
characteristics
(maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
180
160
140
120
100
80
60
40
20
0
100
t=20ms
Non repetitive
Tj initial=25°C
One cycle
10
Tj=25°C
Repetitive
Tc=85°C
VTM (V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tj max:
Vto = 0.85 V
Rd = 25 mΩ
Number of cycles
1
10
100
1000
4.0
4.5
5.0
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
3000
Tj initial=25°C
dI/dt limitation:
50A/µs
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1000
1.5
IH & IL
ITSM
1.0
0.5
I²t
tp (ms)
100
0.01
0.10
1.00
10.00
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
B
C
SW
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
BW/CW/T1635
3
2
1
0
0
25
50
Tj (°C)
75
100
125
4/4
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