®
s
6A TRIAC
S
S
BTA/BTB06 Series
A2
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
G (Q
1
)
Value
6
600 and 800
5 to 50
Unit
A
V
G
A1
A2
mA
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards
.
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA06)
TO-220AB
(BTB06)
Value
TO-220AB
Tc = 110°C
6
Tc = 105°C
t = 20 ms
t = 16.7 ms
60
63
21
Tj = 125°C
Tj = 125°C
Tj = 125°C
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
TO-220AB Ins.
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
tp = 10 ms
F = 120 Hz
tp = 20 µs
A
²
s
A/µs
A
W
°C
A
1
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
■
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
TW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dI/dt)c (2)
V
D
= 12 V
R
L
= 30
Ω
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Without snubber
Tj = 125°C
Tj = 125°C
Tj = 125°C
MIN.
MIN.
MAX.
10
10
15
20
2.7
1.2
-
15
25
30
40
3.5
2.4
-
5
BTA/BTB06
SW
10
1.3
0.2
35
50
60
400
-
-
3.5
50
70
80
1000
-
-
5.3
V/µs
A/ms
CW
35
BW
50
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 3.3 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
C
I
G
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 30
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
STATIC CHARACTERISTICS
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
60
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2
BTA/BTB06 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
8
7
6
5
4
3
2
1
0
0
1
2
IT(RMS)(A)
Fig. 2:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
7
BTB
6
5
4
3
2
1
Tc(°C)
BTA
3
4
5
6
0
0
25
50
75
100
125
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
Fig. 4:
values).
ITM (A)
100
On-state
characteristics
(maximum
Tj max.
Vto = 0.85 V
Rd = 60 mΩ
Tj=Tj max
1E-1
Zth(j-a)
10
tp(s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
VTM(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
Tj initial=25°C
ITSM (A)
70
60
50
40
30
20
10
0
1
Repetitive
Tc=105°C
Non repetitive
Tj initial=25°C
t=20ms
One cycle
dI/dt limitation:
50A/µs
ITSM
100
I²t
Number of cycles
tp (ms)
10
100
1000
10
0.01
0.10
1.00
10.00
3
BTA/BTB06 Series
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
Fig. 8-1:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
SW
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.5
IH & IL
TW
BW/CW
1.0
0.5
Tj(°C)
(dV/dt)c (V/µs)
0.0
-40
-20
0
20
40
60
80
100
120
140
1.0
10.0
100.0
Fig. 8-2:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
C
1.6
1.4
B
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
(dV/dt)c (V/µs)
1
Tj(°C)
1.0
10.0
100.0
0
0
25
50
75
100
125
4
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