DICE/DWF SPECIFICATION
RH1085MK
3A Low Dropout
Positive Adjustable Regulator
PAD FUNCTION
1. V
IN
2. V
OUT
3. ADJUST
2
DIE CROSS REFERENCE
LTC Finished
Part Number
RH1085MK
RH1085MK
Order DICE CANDIDATE
Part Number Below
RH1085MK DICE
RH1085MK DWF*
1
1
Please refer to LTC standard product data sheet for
other applicable product information.
*DWF = DICE in wafer form.
2
3
2
105.5mils
×
121mils
Backside metal: Alloyed gold layer.
Connect backside substrate to Pad 2.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
DICE/DWF ELECTRICAL TEST LIMITS
PARAMETER
Reference Voltage
CONDITIONS
I
OUT
= 10mA, (V
IN
– V
OUT
) = 3V
10mA ≤ I
OUT
≤ 50mA
1.5V ≤ (V
IN
– V
OUT
) ≤ 25V
Line Regulation
Load Regulation
Dropout Voltage
Current Limit
Minimum Load Current
Adjust Pin Current
Adjust Pin Current Change
I
OUT
= 10mA, 1.5V ≤ (V
IN
– V
OUT
) ≤ 15V
15V ≤ (V
IN
– V
OUT
) ≤ 30V
(V
IN
– V
OUT
) = 3V,
10mA ≤ I
OUT
≤ 50mA
ΔV
REF
= 1%, I
OUT
= 50mA
(V
IN
– V
OUT
) = 5V
(V
IN
– V
OUT
) = 25V
T
J
= 25°C
10mA ≤ I
OUT
≤ 50mA
1.5V ≤ (V
IN
– V
OUT
) ≤ 25V
1, 2
1, 2
3
3.2
10
120
5
NOTES
MIN
1.238
1.225
MAX
1.262
1.270
0.2
0.5
0.35
1.5
UNITS
V
V
%
%
%
V
A
mA
µA
µA
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
1
DICE/DWF SPECIFICATION
RH1085MK
DICE/DWF ELECTRICAL TEST LIMITS
Note 1:
See the LT
®
1085 data sheet thermal regulation specifications for
changes in output voltage due to heating effects. Line and load regulation are
measured at a constant junction temperature by low duty cycle pulse testing.
Note 2:
Power dissipation is determined by the input/output differential
voltage and the output current.
Note 3:
Dropout voltage is tested at 50mA but guaranteed over the full
output current range of the device. Test points and limits are shown on the
Dropout Voltage curve in the LT1085 data sheet.
Rad Hard die require special handling as compared to standard IC chips.
Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface
from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride.
LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the
die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a
steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and
flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope.
During die attach, care must be exercised to ensure no tweezers touch the top of the die.
Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus
packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information
on dice performance and lot qualifications via lot sampling test procedures.
Dice data sheet subject to change. Please consult factory for current revision in production.
I.D.No. 66-13-1085
LT 0506 • PRINTED IN USA
2
Linear Technology Corporation
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(408) 432-1900
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