The SGA3486Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gain (dB)
24
18
IRL
GAIN
Features
Gain & Return Loss vs. Frequency
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
ES
-10
-20
-30
-40
5
Return Loss (dB)
0
Si BiCMOS
12
6
0
0
ORL
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
1
FO
Parameter
Small Signal Gain
R
Min.
19.0
Specification
Typ.
21.0
18.0
16.5
12.7
12.5
24.6
26.9
5000
12.2
16.3
3.2
2.9
35
97
N
2
3
Frequency (GHz)
EW
4
SiGe HBT
D
Max.
23.0
3.2
39
SiGe BiCMOS
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>8dB
1950MHz
1950MHz
1950MHz
IG
N
2.6
31
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance
(Junction - Lead)
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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