EVERLIGHT ELECTRONICS CO.,LTD.
Technical Data Sheet
High Power LED – 1W
EHP-AX08S/SUG01-P01/J4K2
Features
Feature of the device: small package with high efficiency
View angle: 170°.
High light flux output: more than 53 lm @ 350mA.
ESD protection.
Soldering methods: Hot bar soldering.
Grouping parameter: total luminous flux, dominant wavelength.
Optical efficiency: 40 lm/W.
Thermal resistance (junction to lead): 15 K/W.
The product itself will remain within RoHS compliant version.
Applications
TFT LCD display backlight
Decorative and entertainment illumination
Signal and symbol luminaries for orientation marker lights
(e.g. steps, exit ways, etc.)
Exterior and interior automotive illumination
Materials
Items
Housing black body
Encapsulating Resin
Lens
Electrodes
Die attach
Chip
Description
Heat resistant polymer
Silicone resin
Heat resistant clear polymer
Ag plating copper alloy
Silver paste
InGaN
Everlight Electronics Co., Ltd.
Device No. : DSE-8S1-X04
http://www.everlight.com
Prepared date: Apr 16, 2007
Rev.1.0
Prepared by:
Anita Chen
Page: 1/10
EVERLIGHT ELECTRONICS CO.,LTD.
EHP-AX08S/SUG01-P01/J4K2
Dimensions
Notes: 1. Dimensions are in millimeters
2. Tolerances unless dimensions ±0.25mm
Everlight Electronics Co., Ltd.
Device No. : DSE-8S1-X04
http://www.everlight.com
Prepared date: Apr 16, 2007
Rev.1.0
Prepared by:
Anita Chen
Page: 2/10
EVERLIGHT ELECTRONICS CO.,LTD.
EHP-AX08S/SUG01-P01/J4K2
Maximum Ratings (T
Ambient
=25ºC)
Parameter
Operating Temperature
Storage Temperature
Junction temperature
Forward Current
Power Dissipation
Junction to heat-sink thermal resistance
Viewing Angle
(1)
Symbol
T
opr
T
stg
T
j
I
F
P
d
R
th
θ
peak
Rating
-40 ~ +100
-40 ~ +100
125
500
2.0
15
80
Unit
ºC
ºC
ºC
mA
W
K/W
deg
Electro-Optical Characteristics (T
Ambient
=25ºC)
Parameter
Bin
J4
J5
Luminous Flux
(2)
K1
K2
V2
Forward Voltage
(3)
V3
V4
C6
G1
Wavelength
(4)
G2
G3
λ
d
V
F
Ф
v
Symbol
Min
39
45
52
60
3.25
3.55
3.85
515
520
525
530
Typ.
----
----
----
----
----
----
----
----
----
----
----
Max
45
52
60
70
3.55
3.85
4.15
520
525
nm
530
535
V
I
F
=350mA
lm
Unit
Condition
Note. 1.
θ
peak
is the off axis angle from lamp centerline where the luminous intensity reaches the peak value.
2. Luminous flux measurement tolerance : ±10%
3. Forward Voltage measurement tolerance : ±0.1V
4. Wavelength measurement tolerance : ±1nm
Everlight Electronics Co., Ltd.
Device No. : DSE-8S1-X04
http://www.everlight.com
Prepared date: Apr 16, 2007
Rev.1.0
Prepared by:
Anita Chen
Page: 3/10
EVERLIGHT ELECTRONICS CO.,LTD.
EHP-AX08S/SUG01-P01/J4K2
Typical Electro-Optical Characteristics Curves
Relative Spectral Distribution,
I
F
=350mA,
T
Ambient
=25ºC
100
Forward Voltage vs Forward Current,
T
Ambient
=25ºC
Relative Luminous Intensity (%)
80
60
40
20
0
400
500
600
700
800
Wavelength (nm)
Relative Luminous Intensity vs Forward
Current,
T
Ambient
=25ºC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Forward Current Derating Curve,
Derating based on T
JMAX
=125°C
400
350
300
250
200
150
100
0
20
40
60
80
100
Relative Luminous Intensity
0
100
200
300
400
500
Forward Current (mA)
Forward Current (mA)
Ambient Temperature
(
ο
C
)
Everlight Electronics Co., Ltd.
Device No. : DSE-8S1-X04
http://www.everlight.com
Prepared date: Apr 16, 2007
Rev.1.0
Prepared by:
Anita Chen
Page: 4/10
EVERLIGHT ELECTRONICS CO.,LTD.
EHP-AX08S/SUG01-P01/J4K2
Typical Representative Spatial Radiation Pattern
0
1 .0
0 .9
0 .8
0 .7
0 .6
0 .5
0 .4
0 .3
0 .2
0 .1
0 .0
-9 0 -8 0 -7 0 -6 0 -5 0 -4 0 -3 0 -2 0 -1 0
0
10
20
30
40
50
60
70
80
90
Everlight Electronics Co., Ltd.
Device No. : DSE-8S1-X04
http://www.everlight.com
Prepared date: Apr 16, 2007
Rev.1.0
Prepared by:
Anita Chen
Page: 5/10