1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History
Revision
No.
0.0
0.1
Initial Draft
Revised P/N according to the new P/N system
History
Draft date
Apr. 19
th
, 2006
Jun.01
st
, 2006
Remark
Preliminary
Preliminary
1
Revision 0.1
Jun. 2006
FMP1617CCx
FEATURES
•
Process Technology : Full CMOS
• Organization : 1M x 16
• Power Supply Voltage : 1.7~1.95V
• Low Power & Page Modes
FMP1617CC1 : support the PASR/DPD function
FMP1617CC2 : support the Direct DPD function
FMP1617CC4 : support the PASR/DPD/PAGE function
FMP1617CC5 : support the Direct DPD/PAGE function
CMOS LPRAM
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm
2
FMP1617CCx-FxxX : Normal
FMP1617CCx-GxxX : Pb-Free
FMP1617CCx-HxxX : Pb-Free & Halogen Free
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
• Separated I/O power(VCCQ) & Core Power(VCC)
• Page read/write operation by 16 words
(FMP1617CC4, FMP1617CC5)
• Operating Temperature Ranges:
Special (-10’C to +60’C)
Commercial (0’C to +70’C)
Extended (-25’C to +85’C)
Industrial (-40’C to +85’C)
• DPD mode by using MRS only
(FMP1617CC1, FMP1617CC4)
• Direct DPD mode when /ZZ goes low
(FMP1617CC2, FMP1617CC5)
PRODUCT FAMILY
Operating
Voltage (V)
Product Family
Min. Typ. Max.
FMP1617CCx-G70E
FMP1617CCx-G85E
70ns
85ns
Speed
Typ.
1.5mA
Power Dissipation
ICC1
f = 1MHz
Max.
3mA
ICC2
f = fmax
Typ.
15mA
12mA
Max.
20mA
ISB1
(CMOS Standby
Current)
Typ.
70uA
Max.
100uA
1.7
1.8
1.95
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and T
A
= 25C.
2.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
3. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
A
B
C
D
E
F
G
H
/LB
I/O9
/OE
/UB
A0
A3
A1
A4
A2
/CS
/ZZ
I/O1
Clk gen.
VCC
VSS
Memory array
I/O10
VSS
I/O11
I/O12
A5
A17
A6
A7
A16
I/O2
I/O4
I/O5
I/O3
VCC
VSS
Row
Addresses
Row
select
VCCQ
I/O15
I/O16
A18
I/O13
I/O14
A19
A8
DNU
A14
A12
A9
A15
A13
A10
I/O6
I/O7
I/O8
I/O1~I/O8
Data
cont
I/O Circuit
Column select
WE
A11
NC
I/O9~I/O16
Data
cont
48-FBGA : Top View(Ball Down)
Data
cont
Column Addresses
Name
/ZZ
/CS
/OE
/WE
A0~A19
I/O1~I/O16
Function
Low Power Modes
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Name
VCC
VCCQ
VSS
/UB
/LB
DNU
Function
Core Power
I/O Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O 1~8)
Do Not Use
/CS
/OE
/WE
/UB
/LB
/ZZ
Control Logic
2
Revision 0.1
Jun. 2006
FMP1617CCx
PRODUCT LIST
Part Name
FMP1617CCx-G70E
FMP1617CCx-G85E
1.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
2. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
CMOS LPRAM
Function
48-FBGA, 70ns, VCC=1.8V, VCCQ=1.8V
48-FBGA, 85ns, VCC=1.8V, VCCQ=1.8V
FUNCTIONAL DESCRIPTION
/CS
H
X
1)
H
X
1)
L
/ZZ
H
L
L
H
H
H
/OE
X
1)
X
1)
X
1)
X
1)
H
H
/WE
X
1)
X
1)
X
1)
X
1)
H
H
/LB
X
1)
X
1)
X
1)
H
L
X
1)
L
L
L
H
X
1)
L
H
H
L
L
H
L
1. X means don’t care.(Must be low or high state)
2. In case of FMP1617CC2 & FMP1617CC5 product
3. In case of FMP1617CC1 & FMP1617CC4 product
/UB
X
1)
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O1-8
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O9-16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Direct DPD
2)
Low Power Modes
3)
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Symbol
V
IN
, V
OUT
Vcc
P
D
T
STG
Ratings
-0.2 to Vcc+0.3V
-0.2 to 3.6
1.0
-65 to 150
Unit
V
V
W
’C
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to
recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Item
Supply voltage
I/O operating voltage (VCCQ
≤
VCC)
Ground
Input high voltage
Input low voltage
Note :
1. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
2. Undershoot : -1.0V in case of pulse width≤20ns.
3. Overshoot and undershoot are sampled, not 100% tested.
Symbol
V
CC
V
CCQ
V
SS
V
IH
V
IL
FMP1617CC
Min
1.7
1.7
0
0.8VCCQ
-0.2
2)
Max
1.95
1.95
0
VCC+0.2
1)
0.2VCCQ
Unit
V
V
V
V
V
3
Revision 0.1
Jun. 2006
FMP1617CCx
CAPACITANCE
1)
(f=1MHz , T
A
=25’C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
V
OL
V
OH
I
SB
I
SB1
I
SB0
Low Power Modes
I
SB0a
I
SB0b
I
SB0c
V
IN
=V
SS
to V
CC
/CS=V
IH
, /ZZ=V
IH
, /OE=V
IH
or /WE=V
IL
, V
IO
=V
SS
to V
CC
Cycle time=1us, 100%duty, I
IO
=0mA, /CS≤0.2V, /ZZ=V
IH
,
V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty, /CS=V
IL
, /ZZ=V
IH
,
V
IN
=V
IL
or V
IH
I
OL
=0.5mA
I
OH
=-0.5mA
/CS=V
IH
, /ZZ=V
IH
, Other inputs=V
IH
or V
IL
/CS≥V
CC
-0.2V, /ZZ≥V
CC
-0.2V, Other inputs=0~V
CC
/ZZ≤0.2V, Other inputs=0~V
CC
, No refresh(DPD)
/ZZ≤0.2V, Other inputs=0~V
CC
, ¼ refresh area selection
/ZZ≤0.2V, Other inputs=0~V
CC
, ½ refresh area selection
/ZZ≤0.2V, Other inputs=0~V
CC
, All refresh area selection
0.8VCCQ
-
-
-
-
-
-
-
-
-
-
-
-
0.3
100
10
70
80
100
Test Conditions
Min
-1
-1
-
-
Typ
-
-
-
-
Max
1
1
3
20
0.2VCCQ
Unit
uA
uA
mA
mA
V
V
mA
uA
uA
uA
uA
uA
Operating Range
Device
FMP1617CCx-XxxS
FMP1617CCx-XxxC
FMP1617CCx-XxxE
FMP1617CCx-XxxI
Range
Special
Commercial
Extended
Industrial
Ambient Temperature
-10℃ to +60℃
0℃ to +70℃
1.7V to 1.95V
-25℃ to +85℃
-40℃ to +85℃
1.7V to 1.95V
V
DD
V
DDQ
4
Revision 0.1
Jun. 2006
FMP1617CCx
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level : 0.2 to VCC-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.5*VCCQ
Output load(see right) : C
L
=30pF+1TTL
30pf
CMOS LPRAM
1TTL
AC CHARACTERISTICS
(V
CC
=1.7V~1.95V)
Speed Bins
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
/UB, /LB Access Time
Read
Chip Select to Low-Z Output
/UB, /LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High- Z Output
/UB, /LB Disable to High- Z Output
Output Disable to High- Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
/UB, /LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Page Mode Cycle Time
Page
Page Mode Address Access Time
Maximum Cycle Time
/CS High Pulse Width
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
tPC
tPAA
tMRC
tCP
70
-
-
-
-
10
10
5
0
0
0
5
70
60
0
60
60
50
0
0
20
0
5
25
-
-
10
70ns
Max
20k
70
70
25
70
-
-
-
5
5
5
-
20k
-
-
-
-
-
-
5
-
-
-
-
25
20k
-
Min
85
-
-
-
-
10
10
5
0
0
0
5
85
70
0
70
70
60
0
0
20
0
5
30
-
-
10
85ns
Max
20k
85
85
30
85
-
-
-
5
5
5
-
20k
-
-
-
-
-
-
5
-
-
-
-
30
20k
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
调一个正弦信号发生器，用SignalTap Ⅱ测波形，下载后点击Autorun Analysis键，出现了这样的错误Error: Can't find the instance. Download a design with SRAM Object File containing this i ......
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