CMP0417AAx-E
Document Title
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History
Revision
No.
0.0
0.1
0.2
0.3
Initial Draft
Add tCP=10ns in AC characteristics
Minor Changes
Minor Changes
Modified functional description & MRS update timing
Minor Changes
Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions
Removed the MRS DPD function
Minor Changes
Removed 60ns descriptions
History
Draft date
Dec. 22
nd
, 2003
Mar. 10
th
, 2004
Jul. 6
th
, 2004
Nov. 8
th
, 2004
Remark
Preliminary
Final
Final
Final
0.4
Oct. 26
th
, 2005
Final
0.5
Aug. 22
nd
, 2006
Final
1
Revision 0.5
Aug. 2006
CMP0417AAx-E
FEATURES
•
Process Technology : Full CMOS
• Organization : 256K x 16
• Power Supply Voltage : 2.7~3.3V
• Low Power & Page Modes
CMP0417AA1 : support the PASR function
CMP0417AA2 : support the DPD function
CMP0417AA4 : support the PASR/PAGE function
CMP0417AA5 : support the DPD/PAGE function
CMOS LPRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm
2
• Separated I/O power(VCCQ) & Core Power(VCC)
• Page read/write operation up to 16 words
(CMP0417AA4, CMP0417AA5)
• DPD mode when /ZZ goes low
(CMP0417AA2, CMP0417AA5)
PRODUCT FAMILY
Operating
Temperature
Operating
Voltage (V)
Speed
Min. Typ. Max.
CMP0417AAx-F70E
Industrial
(-25~85’C)
2.7
3.0
3.3
70ns
Typ.
1.5mA
Power Dissipation
ICC1
f = 1MHz
Max.
3mA
ICC2
f = fmax
Typ.
12mA
Max.
20mA
ISB1
(CMOS Standby
Current)
Typ.
30uA
Max.
70uA
Product Family
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and T
A
= 25C.
2.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
A
B
C
D
E
F
G
H
/LB
I/O9
/OE
/UB
A0
A3
A1
A4
A2
/CS
/ZZ
I/O1
Clk gen.
VCC
VSS
Memory array
I/O10
VSS
I/O11
I/O12
A5
A17
A6
A7
A16
I/O2
I/O4
I/O5
I/O3
VCC
VSS
Row
Addresses
Row
select
VCCQ
I/O15
I/O16
NC
I/O13
I/O14
NC
A8
DNU
A14
A12
A9
A15
A13
A10
I/O6
I/O7
I/O8
I/O1~I/O8
Data
cont
I/O Circuit
Column select
/WE
A11
NC
I/O9~I/O16
Data
cont
48-FBGA : Top View(Ball Down)
Name
/ZZ
/CS
/OE
/WE
A0~A17
I/O1~I/O16
NC
Function
Low Power Modes
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
No Connection
Name
VCC
VCCQ
VSS
/UB
/LB
DNU
Function
Core Power
I/O Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O 1~8)
Do Not Use
/CS
/OE
/WE
/UB
/LB
/ZZ
Control Logic
Data
cont
Column Addresses
2
Revision 0.5
Aug. 2006
CMP0417AAx-E
PRODUCT LIST
Extended Temperature Products(-25~85’C)
Part Name
CMP0417AAx-F70E
1.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
CMOS LPRAM
Function
48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
FUNCTIONAL DESCRIPTION
/CS
H
X
1)
H
X
1)
L
/ZZ
H
L
L
H
H
H
/OE
X
1)
X
1)
X
1)
X
1)
H
H
/WE
X
1)
X
1)
X
1)
X
1)
H
H
/LB
X
1)
X
1)
X
1)
H
L
X
1)
L
L
L
H
X
1)
L
H
H
L
L
H
L
1. X means don’t care.(Must be low or high state)
2. In case of CMP0417AA2 & CMP0417AA5 product
3. In case of CMP0417AA1 & CMP0417AA4 product
/UB
X
1)
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O1-8
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O9-16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
DPD
2)
Low Power Modes
3)
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
Vcc
P
D
T
STG
T
A
Ratings
-0.2 to Vcc+0.3V
-0.2 to 3.6
1.0
-65 to 150
-25 to 85
Unit
V
V
W
’C
’C
1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
I/O operating voltage (VCCQ
≤
VCC)
Ground
Input high voltage
Input low voltage
Symbol
V
CC
V
CCQ
V
SS
V
IH
V
IL
CMP0417AA
Min
2.7
2.7
0
0.8VCCQ
-0.2
3)
Max
3.3
3.3
0
VCC+0.2
2)
0.2VCCQ
Min
2.7
2.25
0
0.8VCCQ
-0.2
3)
Max
3.3
2.75
0
VCC+0.2
2)
0.2VCCQ
Min
2.7
1.65
0
0.8VCCQ
-0.2
3)
Max
3.3
1.95
0
VCC+0.2
2)
0.2VCCQ
Unit
V
V
V
V
V
Note :
1.T
A
=-25 to 85’C, otherwise specified.
2. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
3. Undershoot : -1.0V in case of pulse width≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
3
Revision 0.5
Aug. 2006
CMP0417AAx-E
CAPACITANCE
1)
(f=1MHz , T
A
=25’C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Deep Power Down
Current
1)
Low Power Modes
V
OL
V
OH
I
SB
I
SB1
I
SB0
I
SB0a
I
SB0b
I
SB0c
V
IN
=V
SS
to V
CC
/CS=V
IH
, /ZZ=V
IH
, /OE=V
IH
or /WE=V
IL
, V
IO
=V
SS
to V
CC
Cycle time=1us, 100%duty, I
IO
=0mA, /CS≤0.2V, /ZZ=V
IH
,
V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty, /CS=V
IL
, /ZZ=V
IH
,
V
IN
=V
IL
or V
IH
I
OL
=0.5mA
I
OH
=-0.5mA
/CS=V
IH
, /ZZ=V
IH
, Other inputs=V
IH
or V
IL
/CS≥V
CC
-0.2V, /ZZ≥V
CC
-0.2V, Other inputs=0~V
CC
/ZZ≤0.2V, Other inputs=0~V
CC
, No refresh(DPD)
/ZZ≤0.2V, Other inputs=0~V
CC
, ¼ refresh area selection
/ZZ≤0.2V, Other inputs=0~V
CC
, ½ refresh area selection
/ZZ≤0.2V, Other inputs=0~V
CC
, All refresh area selection
0.8VCCQ
-
-
-
-
-
-
-
-
-
-
-
-
0.3
70
10
40
50
70
Test Conditions
Min
-1
-1
-
-
Typ
-
-
-
-
Max
1
1
3
25
0.2VCCQ
Unit
uA
uA
mA
mA
V
V
mA
uA
uA
uA
uA
uA
1. CMP0817BA2 & CMP0817BA5 products support DPD(Deep Power Down) Current
4
Revision 0.5
Aug. 2006
CMP0417AAx-E
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level : 0.2 to VCC-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.5*VCCQ
Output load(see right) : C
L
=30pF+1TTL
30pf
CMOS LPRAM
1TTL
AC CHARACTERISTICS
(V
CC
=2.7V~3.3V, Extended product : T
A
=-25 to 85’C)
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
/UB, /LB Access Time
Read
Chip Select to Low-Z Output
/UB, /LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High- Z Output
/UB, /LB Disable to High- Z Output
Output Disable to High- Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
/UB, /LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Page Mode Cycle Time
Page
Page Mode Address Access Time
Maximum Cycle Time
/CS High Pulse Width
1)
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
tPC
tPAA
tMRC
tCP
70
-
-
-
-
10
10
5
0
0
0
5
70
60
0
60
60
50
0
0
20
0
5
25
-
-
10
70ns
Max
160k
70
70
25
70
-
-
-
5
5
5
-
160k
-
-
-
-
-
-
5
-
-
-
-
25
160k
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
5
Revision 0.5
Aug. 2006
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