Features
•
Supply Voltage 5V (Typically)
•
Very Low Power Consumption: 150 mW (Typically) for –1 dBm Output Level
•
Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO
•
•
•
•
•
•
Input Signal
Phase Control Loop for Precise 90° Phase Shifting
Power-down Mode
Low LO Input Level: –10 dBm (Typically)
50-Ω Single-ended LO and RF Port
LO Frequency from 100 MHz to 1 GHz
SO16 Package
Benefits
•
No External Components Required for Phase Shifting
•
Adjustment Free, Hence Saves Manufacturing Time
•
Only Three External Components Necessary, this Results in Cost and Board Space
Saving
1000-MHz
Quadrature
Modulator
U2790B
Electrostatic sensitive device.
Observe precautions for handling.
1. Description
The U2790B is a 1000-MHz quadrature modulator using Atmel
®
’s advanced UHF pro-
cess. It features a frequency range from 100 MHz up to 1000 MHz, low current
consumption, and single-ended RF and LO ports. Adjustment-free application makes
the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM,
ADC, JDC.
Figure 1-1.
Block Diagram
S
PU
BB
AI
BB
AI
8
7
6
Power
up
PU
1
V
S
5,4
LO
i
Ph
adj
BB
Bi
BB
BI
12
15
16
9
10
Duty cycle
regenerator
Frequency
doubler
0°
90°
90°/control
loop
Σ
3
RF
O
2,11,13,14
GND
4583D–CELL–07/06
2. Pin Configuration
Figure 2-1.
Pinning SO16
PU
GND
RF
O
V
S
V
S
S
PD
BB
Ai
BB
Ai
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Ph
adj
Ph
adj
GND
GND
LO
i
GND
BB
Bi
BB
Bi
Table 2-1.
Pin
1
2, 11, 13, 14
3
4, 5
6
7
8
9
10
12
15, 16
Pin Description
Symbol
PU
GND
RF
o
V
S
S
PU
BB
Ai
BB
Ai
BB
Bi
BB
Bi
LO
i
Ph
adj
Function
Power-up input
Ground
RF output
Supply voltage
Settling time power-up
Baseband input A
Baseband input A inverse
Baseband input B
Baseband input B inverse
LO input
Phase adjustment (not necessary for regular applications)
2
U2790B
4583D–CELL–07/06
U2790B
3. Absolute Maximum Ratings
Parameters
Supply voltage
Input voltage
Junction temperature
Storage temperature range
Symbol
V
S
V
i
T
j
T
Stg
Value
6
0 to V
S
125
–55 to +125
Unit
V
V
°C
°C
4. Operating Range
Parameters
Supply voltage range
Ambient temperature range
Symbol
V
S
T
amb
Value
4.5 to 5.5
–40 to +85
Unit
V
°C
5. Thermal Resistance
Parameters
Junction ambient SO16
Symbol
R
thJA
Value
110
Unit
K/W
6. Electrical Characteristics
Test conditions (unless otherwise specified): V
S
= 5V, T
amb
= 25°C, referred to test circuit, system impedance Z
O
= 50Ω, f
LO
= 900 MHz,
P
LO
= –10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
Supply voltage range
Supply current
Baseband Inputs
Input-voltage range
(differential)
Input impedance
(single ended)
Input-frequency
range
(5)
Internal bias voltage
Temperature
coefficient
Test Conditions
Pin
4, 5
4, 5
7-8,
9-10
Symbol
V
S
I
S
Min.
4.5
24
Typ.
30
Max.
5.5
37
Unit
V
mA
Type*
A
A
1.1
1.2
2
2.1
2.2
2.3
2.4
2.5
V
BBi
Z
BBi
f
BBi
V
BBb
TC
BB
0
2.35
1000
3.2
1500
mV
pp
kΩ
D
D
D
A
D
250
2.5
0.1
2.65
<1
MHz
V
mV/°C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
≤
–1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= –30°C to +85°C and V
S
= 4.5V to 5.5V.
5. By low impedance signal source.
3
4583D–CELL–07/06
6. Electrical Characteristics (Continued)
Test conditions (unless otherwise specified): V
S
= 5V, T
amb
= 25°C, referred to test circuit, system impedance Z
O
= 50Ω, f
LO
= 900 MHz,
P
LO
= –10 dBm, V
BBi
= 1 V
pp
differential.
No.
Parameters
LO Input
Frequency range
Input level
(1)
Input impedance
Voltage standing
wave ratio
Duty cycle range
RF Output
Output level
LO suppression
(2)
Sideband
suppression
(2, 3)
Phase error
(4)
Amplitude error
Noise floor
VSWR
3rd-order baseband
harmonic
suppression
RF harmonic
suppression
Power-up Mode
Supply current
Test Conditions
Pin
12
Symbol
f
LOi
P
LOi
Z
iLO
VSWR
LO
DCR
LO
Min.
50
–12
Typ.
Max.
1000
Unit
MHz
dBm
Ω
Type*
D
D
D
D
D
3
3.1
3.2
3.3
3.4
3.5
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
–10
50
1.4
–5
2
0.6
0.4
–5
30
32
35
30
–1
35
35
40
35
<1
< ±0.25
–132
–144
1.6
35
45
3
f
LO
= 900 MHz
f
LO
= 150 MHz
f
LO
= 900 MHz
f
LO
= 150 MHz
P
RFo
LO
RFo
SBS
RFo
P
e
A
e
+2
dBm
dB
dB
deg.
dB
dBm/Hz
B
B
B
D
D
D
D
V
BBi
= 2V, V
BBi
= 3V
V
BBi
= V
BBi
= 2.5V
N
FL
VSWR
RF
S
BBH
S
RFH
2
dB
D
4.9
5
5.1
35
dB
D
V
PU
≤
0.5V
V
PU
= 1V
C
SPU
= 100 pF
C
LO
= 100 pF
C
RFo
= 1 nF
4, 5
I
PU
t
sPU
10
1
µA
D
5.2
6
6.1
6.2
Notes:
Settling time
Switching Voltage
Power-on
Power-up
6 to 3
10
µs
D
1
1
V
PUon
V
PUdown
4
1
V
V
D
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
1. The required LO level is a function of the LO frequency.
2. In reference to an RF output level
≤
–1 dBm and I/Q input level of 400 mV
pp
differential.
3. Sideband suppression is tested without connection at pins 15 and 16. For higher requirements a potentiometer can be
connected at these pins.
4. For T
amb
= –30°C to +85°C and V
S
= 4.5V to 5.5V.
5. By low impedance signal source.
4
U2790B
4583D–CELL–07/06
U2790B
7. Diagrams
Figure 7-1.
Typical Single Sideband Output Spectrum at V
S
= 4.5V and V
S
= 5.5V,
f
LO
= 900 MHz, P
LO
= –10 dBm, V
BBI
= 1 V
PP
(differential) T
amb
= 25°C
Figure 7-2.
Typical GMSK Output Spectrum
5
4583D–CELL–07/06
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
