DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC3224TB
5 V, SILICON MMIC
WIDEBAND AMPLIFIER
DESCRIPTION
The
µ
PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using
our 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
• Wideband response : f
u
= 3.2 GHz TYP. @ 3 dB bandwidth
• Low current
• Power gain
• Supply voltage
• Port impedance
: I
CC
= 9.0 mA TYP.
: G
P
= 21.5 dB TYP. @ f = 1.0 GHz
: G
P
= 21.5 dB TYP. @ f = 2.2 GHz
: V
CC
= 4.5 to 5.5 V
: input/output 50
Ω
APPLICATION
• IF amplifiers in DBS converters etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
C3K
Supplying Form
•
Embossed tape 8 mm wide
•
1, 2, 3 pins face the perforation side of tape
•
Qty 3 kpcs/reel
µ
PC3224TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PC3224TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10490EJ01V0DS (1st edition)
Date Published May 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004
µ
PC3224TB
PIN CONNECTIONS
Pin No.
Pin Name
INPUT
GND
GND
OUTPUT
GND
V
CC
(Top View)
(Bottom View)
4
5
6
4
5
6
3
2
1
1
2
3
4
5
6
3
2
1
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM WIDEBAND AMPLIFIER
(T
A
= +25°C, f = 1 GHz, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω)
f
u
(GHz)
2.9
2.6
Note
C3K
Part No.
P
O (sat)
(dBm)
+1.0
+3.0
+3.5
+4.0
G
P
(dB)
13
20
20.5
21.5
NF
(dB)
5.0
4.5
2.3
4.3
I
CC
(mA)
12
12
14
9.0
Package
6-pin super minimold
Marking
C1G
C1H
C3H
C3K
µ
PC2711TB
µ
PC2712TB
µ
PC3215TB
µ
PC3224TB
2.9
3.2
Note
µ
PC3215TB is f = 1.5 GHz
Remark
Typical performance. Please refer to
ELECTRICAL CHARACTERISTICS
in detail.
2
Data Sheet PU10490EJ01V0DS
µ
PC3224TB
PIN EXPLANATIONS
PIN
No.
1
Pin Name
INPUT
Applied
Voltage (V)
–
Pin Voltage
Note
(V)
0.91
Signal input pin.
A internal matching circuit, configured with resistors, enables 50
Ω
connection over a wide band.
A multi-feedback circuits is designed to cancel the deviations of h
FE
and
resistance.
This pin must be coupled to signal source with capacitor for DC cut.
4
OUTPUT
–
4.42
Signal output pin.
A internal matching circuit, configured with resistors, enables 50
Ω
connection over a wide band.
This pin must be coupled to next stage with capacitor for DC cut.
6
V
CC
4.5 to 5.5
–
Power suplly pin.
This pin should be externally equipped with bypass capacitor to minimize
its impedance.
2
3
5
GND
0
–
Ground pin.
This pin should be connected to system ground with minimum
inductance. Ground pattern on the board should be formed as wide as
possible.
All the ground pins must be connected together with wide ground pattern
to decrease impedance difference.
Function and Applications
Note
Pin Voltage is measured at V
CC
= 5.0 V
Data Sheet PU10490EJ01V0DS
3
µ
PC3224TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Total Circuit Current
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
Symbol
V
CC
I
CC
P
D
T
A
T
stg
P
in
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +85°C
Note
Conditions
Ratings
6.0
25
270
−40
to +85
−55
to +150
+10
Unit
V
mA
mW
°C
°C
dBm
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
V
CC
T
A
Conditions
MIN.
4.5
−40
TYP.
5.0
+25
MAX.
5.5
+85
Unit
V
°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, V
CC
= 5.0 V, Z
S
= Z
L
= 50
Ω)
Parameter
Circuit Current
Power Gain
Symbol
I
CC
G
P
Test Conditions
No input signal
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
Saturated Output Power
P
O (sat)
f = 1.0 GHz, P
in
=
−5
dBm
f = 2.2 GHz, P
in
=
−5
dBm
Gain 1 dB Compression Output
Power
Noise Figure
NF
P
O (1 dB)
f = 1.0 GHz
f = 2.2 GHz
f = 1.0 GHz
f = 2.2 GHz
Upper Limit Operating Frequency
Isolation
f
u
ISL
3 dB down below flat gain at f = 0.1 GHz
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
Input Return Loss
RL
in
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
Output Return Loss
RL
out
f = 1.0 GHz, P
in
=
−30
dBm
f = 2.2 GHz, P
in
=
−30
dBm
Gain Flatness
MIN.
7.0
19.0
18.5
+1.5
−1.5
−6.5
−8.5
−
−
2.8
35.0
37.0
9.0
10.0
11.0
8.0
−
TYP.
9.0
21.5
21.5
+4.0
+1.5
−3.5
−5.5
4.3
4.3
3.2
40.0
42.0
12.0
14.0
17.0
12.0
±0.8
MAX.
12.0
24.0
24.5
−
−
−
−
5.8
5.8
−
−
−
−
−
−
−
−
dB
dB
dB
GHz
dB
dB
dBm
dBm
Unit
mA
dB
∆
G
P
f = 0.1 to 2.2 GHz
4
Data Sheet PU10490EJ01V0DS
µ
PC3224TB
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(T
A
= +25°C, V
CC
= 5.0 V, Z
S
= Z
L
= 50
Ω)
Parameter
Output Intercept Point
Symbol
OIP
3
Test Conditions
f = 1.0 GHz
f = 2.2 GHz
Reference Value
+7.0
+5.5
Unit
dBm
Data Sheet PU10490EJ01V0DS
5
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