SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
APPEARANCE
DESCRIPTION
This surface mount Transient Voltage Suppressor (TVS) product family includes a
rectifier diode element in series and opposite direction to achieve low capacitance
below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low
TVS capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects per
IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. They
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar
transient capability is required, two of these low capacitance TVS devices may be used
in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
WWW .
Microsemi
.C
OM
FEATURES
•
•
•
•
Available in standoff voltage range of 6.5 to 200 V
Low capacitance of 100 pF or less
Molding compound flammability rating: UL94V-O
Two different terminations available in C-bend (modified J-
Bend with DO-214AB) or Gull-wing (DO-215AB)
•
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding MQ,
MX, or MV prefixes respectively to part numbers
•
Optional 100% screening for avionics grade is available by
adding MA prefix to part number for 100% temperature
cycle –55ºC to 125ºC (10X) as well as surge (3X) and 24
hours HTRB with post test V
BR
& I
R
•
RoHS Compliant devices available by adding an “e3” suffix
•
•
•
APPLICATIONS / BENEFITS
1500 Watts of Peak Pulse Power at 10/1000
μs
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to
Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) &
ARINC 429 with bit rates of 100 kb/s (per ARINC
429, Part 1, par 2.4.1.1)
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)
IEC61000-4-5 (Lightning) as further detailed in
LCE6.5 thru LCE170A data sheet
T1/E1 Line Cards
Base Stations, WAN & XDSL Interfaces
CSU/DSU Equipment
•
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
•
•
•
•
1500 Watts of Peak Pulse Power dissipation at 25 C
with
repetition rate of 0.01% or less*
o
MECHANICAL AND PACKAGING
CASE: Molded, surface mountable
TERMINALS: Gull-wing or C-bend (modified J-
bend) tin-lead or RoHS compliant annealed
matte-tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number with abbreviated prefix
(CLC6.5A, CLC6.5Ae3, CLC33, CLC33e3, etc.)
TAPE & REEL option: Standard per EIA-481-B
with 16 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
Clamping Factor: 1.4 @ Full Rated power
1.30 @ 50% Rated power
-9
t
clamping
(0 volts to V
(BR)
min): Less than 5x10 seconds
Operating and Storage temperatures: -65 to +150
o
C
Steady State power dissipation: 5.0W @ T
L
= 50
o
C
THERMAL RESISTANCE: 20
o
C/W (typical junction to
lead (tab) at mounting plane
* When pulse testing, do not pulse in opposite direction
(see “Schematic Applications” section herein and
Figures 5 & 6 for further protection in both directions)
•
•
•
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI
Part Number
Gull-Wing
“G”
Bend Lead
SMCGLCE6.5
SMCGLCE6.5A
SMCGLCE7.0
SMCGLCE7.0A
SMCGLCE7.5
SMCGLCE7.5A
SMCGLCE8.0
SMCGLCE8.0A
SMCGLCE8.5
SMCGLCE8.5A
SMCGLCE9.0
SMCGLCE9.0A
SMCGLCE/SMCJLCE, e3
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJLCE6.5
SMCJLCE6.5A
SMCJLCE7.0
SMCJLCE7.0A
SMCJLCE7.5
SMCJLCE7.5A
SMCJLCE8.0
SMCJLCE8.0A
SMCJLCE8.5
SMCJLCE8.5A
SMCJLCE9.0
SMCJLCE9.0A
Reverse
Stand-Off
Voltage
Breakdown Voltage
V
BR
Volts
MIN
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
@ I
(BR)
Maximum
Reverse
Leakage
Maximum
Clamping
Voltage
V
WM
Volts
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
@V
WM
MAX
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
mA
10
10
10
10
10
10
1
1
1
1
1
1
@I
PP
V
C
Volts
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
I
D
μA
1000
1000
500
500
250
250
100
100
50
50
10
10
Maximum
Peak Pulse
Current
I
PP
@10/1000
Amps
100
100
100
100
100
100
100
100
94
100
89
97
Maximum
Capacitance
@ 0 Volts,
f = 1 MHz
pF
100
100
100
100
100
100
100
100
100
100
100
100
V
WIB
Working
Inverse
Blocking
Voltage
Volts
75
75
75
75
75
75
75
75
75
75
75
75
I
IB
Inverse
Blocking
Leakage
Current
μA
10
10
10
10
10
10
10
10
10
10
10
10
V
PIB
Peak
Inverse
Blocking
Voltage
Volts
100
100
100
100
100
100
100
100
100
100
100
100
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SCOTTSDALE DIVISION
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
GRAPHS
WWW .
Microsemi
.C
OM
P
PP
– Peak Pulse Power – kW
Test wave form
parameterxs
tr
= 10
μs
tp
= 1000
μs
tp – Pulse Time – sec
FIGURE 2
PULSE WAVEFORM
FIGURE 1
PEAK PULSE POWER vs. PULSE TIME
Peak Pulse Power (P
PP
) or Current (I
PP
)
o
in percent of 25 C rating
T – Temperature –
o
C
FIGURE 3
DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage V
C
. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
SMCGLCE/SMCJLCE, e3
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
Page 3
Copyright
©
2009
2-11-2009 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MEMS传感器
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