January 2001
Si4925DY
Dual P-Channel, Logic Level, PowerTrench
®
MOSFET
General Description
These P-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. R
DS(ON)
= 0.032
Ω
@ V
GS
= -10 V,
R
DS(ON)
= 0.045
Ω
@ V
GS
= -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
4
3
2
1
2
49
5
6
SO-8
pin
1
S1
G1
S2
G2
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
Si4925DY
-30
±20
(Note 1a)
Units
V
V
A
-6
-20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
°C
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
© 2001 Fairchild Semiconductor International
Si4925DY Rev.A
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
-30
-21
-1
-10
100
-100
-1
o
V
mV/
o
C
µA
µA
nA
nA
V
mV/
o
C
0.032
0.051
0.045
A
16
1540
400
170
S
pF
pF
pF
24
35
75
30
20
ns
ns
ns
ns
nC
nC
nC
-1.3
A
V
∆
BV
DSS
/
∆
T
J
I
DSS
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= -10 V, I
D
= -6 A
T
J
=125°C
V
GS
= -4.5 V, I
D
= -5 A
-1.7
4
0.025
0.033
0.034
-20
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
-3
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -6 A
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -15 V, I
D
= -1 A
V
GEN
= -10 V, R
GEN
= 6
Ω
13
22
47
18
V
DS
= -10 V, I
D
= -6 A,
V
GS
= -5 V
14.5
4
5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.73
-1.2
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si4925DY Rev.A
Typical Electrical Characteristics
30
- I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-6.0V
2.5
-4.5V
R
DS(ON)
, NORMALIZED
24
2
V
GS
= -3.5V
18
-3.5V
-4.0 V
1.5
-4.5 V
-5.5 V
-7.0 V
12
-3.0V
6
1
-10V
0
0.5
0
1
-V
DS
2
3
4
5
0
6
, DRAIN-SOURCE VOLTAGE (V)
12
18
- I
D
, DRAIN CURRENT (A)
24
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.1
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
DRAIN-SOURCE ON-RESISTANCE
1.4
I
D
= -6A
V
GS
= -10V
I
D
= -3A
0.08
R
DS(ON)
, NORMALIZED
1.2
0.06
1
0.04
TA = 125°C
25° C
0.8
0.02
0.6
-50
-25
0
25
50
75
100
125
150
0
2
T
J
, JUNCTION TEMPERATURE (° C)
4
6
8
- V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
Temperature.
30
with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
V
DS
= -5.0V
- I
D
, DRAIN CURRENT (A)
24
T
J
= -55° C
25° C
125° C
- I
S
, REVERSE DRAIN CURRENT (A)
10
V
GS
= 0V
TJ = 125° C
25° C
1
18
0.1
-55° C
12
6
0.01
0
1.5
0.001
2
2.5
3
3.5
4
4.5
0
0.3
0.6
0.9
1.2
1.5
- V
GS
, GATE TO SOURCE VOLTAGE (V)
- V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4925DY Rev.A
Typical Electrical Characteristics
(continued)
10
- V
GS
, GATE-SOURCE VOLTAGE (V)
3000
I
D
= -6A
8
V
DS
= -5V
CAPACITANCE (pF)
2000
Ciss
-10V
-15V
1000
6
500
Coss
4
2
200
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
Crss
0
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
100
0.1
10
20
30
- V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
10
- I
D
, DRAIN CURRENT (A)
3
IT
LIM
N)
(O
S
RD
10
1m
10m
0u
30
s
25
20
15
10
5
0
0.01
s
s
0.5
0.05
V
GS
= -10V
SINGLE PULSE
R
θ
JA
=135°C/W
T
A
= 25°C
0.3
1
2
DC
1s
10s
0.01
0.1
5
10
30
50
POWER (W)
10
s
SINGLE PULSE
R
θ
JA
=135°C/W
T
A
= 25°C
0m
0.1
0.5
10
50 100
300
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
JA
= 135°C/W
θ
t
1
t
2
T
J
- T
A
= P * R
θ
JA(t)
Duty Cycle, D = t
1
/t
2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4925DY Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
嵌入式系统
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