Advanced Technical Information
MIO 1200-33E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
C
C'
3
5
I
C80
= 1200 A
= 3300 V
V
CES
V
CE(sat) typ.
= 3.1 V
C
7
C
9
G
2
E'
1
E
4
E
6
E
8
IGBT
Symbol
V
CES
V
GES
I
C80
I
CM
t
SC
T
C
= 80°C
t
p
= 1 ms; T
C
= 80°C
V
CC
= 2500 V; V
CEM CHIP
= < 3300 V;
V
GE
< 15 V; T
VJ
< 125°C
Conditions
V
GE
= 0 V
3300
-o
1200
2400
10
±
20
e
3.1
3.8
6
1750
2000
u
V
V
A
A
µs
V
V
8
V
120 mA
500 nA
mJ
mJ
Maximum Ratings
s
V
CE(sat)
①
V
GE(th)
I
CES
I
GES
E
on
E
off
R
thJC
①
Collector emitter saturation voltage is given at chip level
I
C
= 1200 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 3300 V; V
GE
= 0 V; T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V; T
VJ
= 125°C
Inductive load; T
VJ
= 125°C; V
GE
= ±15 V;
V
CC
= 1800V; I
C
= 1200A; R
G
= 1Ω; L
σ
= 100nH
p
I
C
= 240 mA; V
CE
= V
GE
h
a
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
0.0085 K/W
t
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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405
Advanced Technical Information
MIO 1200-33E11
Diode
Symbol
I
F80
I
FSM
Conditions
T
C
= 80°C
V
R
= 0 V; T
VJ
= 125°C; t
p
= 10 ms; half-sinewave
Maximum Ratings
1200
12000
A
A
Symbol
V
F
②
I
RM
t
rr
Q
RR
E
rec
R
thJC
Conditions
I
F
= 1200 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
min.
typ. max.
2.30
2.35
1680
800
1320
1740
V
V
A
ns
µC
mJ
0.017 K/W
V
CC
= 1800 V; I
C
= 1200 A;
V
GE
= ±15 V; R
G
= 1
Ω;
T
VJ
= 125°C
Inductive load; L
σ
= 100nH
Module
Symbol
T
JM
T
VJ
T
stg
M
d
Conditions
max junction temperature
Operatingtemperature
Storage temperature
Mounting torque
Base-heatsink, M6 screws
Main terminals, M8 screws
Maximum Ratings
+125
-40...+125
-40...+125
e
4-6
8 - 10
26
26
56
56
18
0.12
0.006
1500
Symbol
d
A
d
S
V
ISOL
V
E
CTI
L
σ
R
term-chip
*
R
thCH
Weight
Conditions
Clearance distance
Surface creepage
distance
1 min, f = 50 Hz
h
terminal to base
terminal to terminal
a
s
terminal to base
terminal to terminal
Characteristic Values
min.
typ. max.
mm
mm
mm
mm
V~
V
p
10500
5100
600
Partial discharge extinction voltage
f = 50 Hz, Q
PD
≤
10pC
Comperative tracking index
Module stray inductance, C to E terminal
Resistance terminal to chip
per module;
λ
grease = 1 W/m•K
*
)
V = V
CE(sat)
+ R
term-chip
· I
C
resp. V = V
F
+ R
term-chip
· I
F
-o
°C
°C
°C
Nm
Nm
nH
m
Ω
K/W
g
u
© 2004 IXYS All rights reserved
405
2-3
t
②
Forward voltage is given at chip level
Advanced Technical Information
MIO 1200-33E11
Outline drawing
Note: all dimensions are shown in mm
p
h
a
s
e
-o
u
t
© 2004 IXYS All rights reserved
3-3
405
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