MDD 250
High Power
Diode Modules
V
RSM
V
1300
1500
1700
V
RRM
V
1200
1400
1600
Type
MDD 250-12N1
MDD 250-14N1
MDD 250-16N1
3
1
2
I
FRSM
=
2x 450 A
I
FAVM
=
2x 290 A
V
RRM
= 1200-1600 V
E72873
Symbol
I
FRMS
I
FAVM
I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
Maximum Ratings
450
290
11
11,7
9
9,6
605
560
405
380
-40...+150
150
-40...+125
A
A
kA
kA
kA
kA
kA
2
s
kA
2
s
kA
2
s
kA
2
s
°C
°C
°C
V~
V~
Nm
Nm
g
Features
• Direct copper bonded Al
2
O
3
ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
I
2
t
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
;
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
t
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
< 1 mA
t = 1 min
t=1s
3000
3600
2.5 - 5
12 - 15
320
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
Conditions
V
R
= V
RRM
;
I
F
= 600 A;
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristics Values
40
1.3
0.75
0.75
0.129
0.065
0.169
0.0845
760
275
12.7
9.6
50
mA
V
V
mW
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
other values
see Fig. 6/7
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20150910a
© 2015 IXYS All rights reserved
1-4
MDD 250
Dimensions in mm (1 mm = 0.0394“)
42.5
M8x16
hex
SW13
35
28.5
0.25
65 x 57
116
max. 12.4
80
6
5.5
4567
4.5
Threaded spacer for higher Anode /
Cathode construction:
Type
ZY 250
(material brass)
IXYS reserves the right to change limits, test conditions and dimensions.
38
60
32
20150910a
© 2015 IXYS All rights reserved
2-4
MDD 250
15000
10
6
50 Hz, 80%V
RRM
V
R
= 0 V
600
500
10000
T
VJ
= 45°C
400
DC
180° sin.
120° rect.
60° rect.
30° rect.
I
FSM
[s]
5000
I
2
dt
T
VJ
= 45°C
I
FAVM
300
[A s]
2
[A]
T
VJ
= 150°C
200
T
VJ
= 150°C
100
0
10
-3
10
-2
10
-1
10
0
10
1
10
5
1
2
4
6
8
10
0
0
50
100
150
200
t [s]
Fig.
1 Surge
overload
current
I
FSM
: Crest
value, t:
duration
500
t [s]
Fig. 2 I
2
dt versus
time (1-10 ms)
T
C
[°C]
Fig. 2a Maximum
forward current
at case temperature
R
thJA
400
[K/W]
0.3
0.4
0.5
0.6
0.8
1.0
P
T
300
[W]
200
100
DC
180° sin.
120° rect.
60° rect.
30° rect.
1.4
1.8
0
0
100
200
300
0
50
100
150
200
T
FAVM
[A]
T
A
[°C]
Fig. 3
Power dissipation vs. forward current and ambient temperature (per diode)
2000
R
thJA
[K/W]
0.06
0.08
1500
R
L
0.10
0.15
0.20
0.30
0.40
P
T
1000
[W]
500
Circuit
B2
2x MDD250
0.50
R = resistive load
L = inductive
load
0
0
200
400
600
0
50
100
150
200
T
DAVM
[A]
T
A
[°C]
20150910a
Fig.
4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient
IXYS reserves the right to change limits, test conditions and dimensions.
© 2015 IXYS All rights reserved
3-4
MDD 250
2500
R
thJA
[K/W]
0.03
2000
0.05
0.06
0.08
0.12
0.15
0.20
Circuit
B6
3x MDD250
0.30
P
tot
1500
[W]
1000
500
0
0
200
400
600
0
50
100
150
200
T
DAVM
[A]
T
A
[°C]
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
0.14
0.12
0.10
30°
DC
R
thJC
for various conduction angles d
:
d
DC
180°
120°
60°
30°
R
thJC
[K/W]
0.129
0.131
0.132
0.132
0.133
Z
thJC
0.08
0.06
0.04
0.02
0.00
10
-3
[K/W]
Constants for Z
thJC
calculation:
i R
thi
[K/W]
t
i
[s]
1 0.0035
0.0099
2 0.0165
0.168
3 01091
0.456
10
-2
10
-1
10
0
10
1
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)
0.20
30°
R
thJK
for various conduction angles d:
DC
0.16
Z
thJK
0.12
[K/W]
0.08
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.169
0.171
0.172
0.172
0.173
Constants for Z
thJK
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0035
0.0099
2 0.0165
0.168
3 0.1091
0.456
4 0.04
1.36
0.04
0.00
10
-3
10
-2
10
-1
10
0
10
1
t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20150910a
© 2015 IXYS All rights reserved
4-4
stm32/stm8
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