MKH24I650HR
preliminary
CoolMOS
TM 1)
CFD Power MOSFET
I
D25
= 25 A
V
DSS
= 650 V
R
DS(on) max
= 80 mΩ
Single MOSFET
Part number
MKH24I650HR
G
D
S
Backside: isolated
D (2)
G
(1)
S (3)
Features / Advantages:
• High speed switching
• Fast body diode
• Very high commutation ruggedness
• Easy to drive
• Very low FOM R
DSon
* Q
g
and E
OSS
Applications:
• Switch mode power supplies
• Resonant switching converters
• DC/DC converters
• Solar inverters
• Lighting
• Telecom
Package:
ISO247
• Isolation Voltage: 3600V~
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Backside: DCB ceramic
• Reduced weight
• Advanced power cycling
1)
CoolMOS
TM
is a trademark of
Infineon Technologies AG
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be consi-
dered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
20160308
© 2016 IXYS All rights reserved
1-4
MKH24I650HR
preliminary
MOSFET
Symbol
V
DSS
V
GS
V
GSM
I
D25
I
D80
I
D100
R
DSon
V
GS(th)
I
DSS
I
GSS
R
G
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec(off)
R
thJC
R
thJH
Definitions
drain source breakdown voltage
gate source voltage
max. transient gate source voltage
drain current
Ratings
Conditions
min.
-20
-30
I
D
= 18 A; V
GS
= 20 V
I
D
= 1.76 mA; V
DS
= 10 V
V
DS
= 650 V; V
GS
= 0 V
V
DS
= 0 V; V
GS
= 20 V
T
C
= 25°C
T
C
= 80°C
T
C
= 100°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
0.75
V
DS
= 100 V; V
GS
= 0 V; f = 1 MHz
T
VJ
= 25°C
5030
215
170
25
120
33
17
145
16
0.83
0.13
0.16
0.65
with heatsink compound; IXYS test setup
1.0
3.5
500
100
72
190
typ.
max.
650
+20
+30
25
22.5
19
80
4.5
1
V
V
V
A
A
A
mΩ
mΩ
V
µA
µA
nA
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
static drain source on resistance
gate threshold voltage
drain source leakage current
gate source leakage current
internal gate resistance
input capacitance
output capacitance
reverse transfer (Miller) capacitance
total gate charge
gate source charge
gate drain (Miller) charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
thermal resistance junction to case
thermal resistance junction to heatsink
V
DS
= 480 V; I
D
= 25 A; V
GS
= 0/10 V T
VJ
= 25°C
Inductive switching
Free wheeling diode DHG20I600HA
V
DS
= 400 V; I
D
= 25 A
T
VJ
= 25°C
V
GS
= 0 / 10 V; R
G
= 5 Ω (external)
Source-Drain Diode
Symbol
I
S25
I
S100
V
SD
t
rr
Q
RM
I
RM
Definitions
source current, pulsed
forward voltage drop
reverse recovery time
reverse recovery charge (intrinsic diode)
max. reverse recovery current
Ratings
Conditions
V
GS
= 0V
I
F
= 26 A; V
GS
= 0V
V
GS
= 0 V; I
F
= 26 A
V
R
= 400 V; -di
F
/dt = 100 A/µs
T
C
= 25°C
T
C
= 80°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
0.9
180
1
10
min.
typ.
max.
130
70
A
A
V
V
ns
nC
A
Note:
For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended
IXYS reserves the right to change limits, test conditions and dimensions.
20160308
© 2016 IXYS All rights reserved
2-4
MKH24I650HR
preliminary
Package
Symbol
I
RMS
T
stg
T
op
T
VJ
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
C
P
mounting torque
mounting fource with clip
creepage distance on surface | striking distance through air
isolation voltage
coupling capacity
terminal to backside
terminal to terminal
ISO247
Definitions
RMS current
storage temperature
operation temperature
virtual junction temperature
Conditions
per terminal
min.
-55
-55
-55
Ratings
typ. max.
50
150
150
150
6
1.2
120
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
0.8
20
2.7
4.1
3600
3000
16
t = 1 second
t = 1 minute
50 / 60 Hz, RMS; I
ISOL
< 1 mA
between shorted pins and back side metallization
pF
Product Marking
Part number
M = Mosfet
K = CoolMOS
1)
H = CFD die type
24 = Current Rating [A]
I = Single Mosfet
650 = Reverse Voltage [V]
HR = ISO247 (3)
1)
Logo
Part Number
DateCode
Assembly Code
Assembly Line
abcdef
YYWWZ
000000
CoolMOS
TM
is a trademark of
Infineon Technologies AG
Ordering
Standard
Part Name
MKH24I650HR
Marking on Product
MKH24I650HR
Delivering Mode Base Qty Ordering Code
Tube
30
516493
IXYS reserves the right to change limits, test conditions and dimensions.
20160308
© 2016 IXYS All rights reserved
3-4
MKH24I650HR
preliminary
Outlines
ISO247
E
Q
A
A2
A3
S
Ø
P
2x
E3
2x D3
Dim.
D
2x
E2
D1
4
1
L1
E1
L
2
3
D2
2x
b2
b4
2x
e
3x
b
C
A1
Millimeter
min
max
A
4.70
5.30
A1 2.21
2.59
A2 1.50
2.49
A3
typ. 0.05
b
0.99
1.40
b2 1.65
2.39
b4 2.59
3.43
c
0.38
0.89
D 20.79 21.45
D1
typ. 8.90
D2
typ. 2.90
D3
typ. 1.00
E 15.49 16.24
E1
typ. 13.45
E2 4.31
5.48
E3
typ. 4.00
e
5.46 BSC
L
19.80 20.30
L1
-
4.49
Ø P 3.55
3.65
Q
5.38
6.19
S
6.14 BSC
Inches
min
max
0.185 0.209
0.087 0.102
0.059 0.098
typ. 0.002
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.819 0.844
typ. 0.350
typ. 0.114
typ. 0.039
0.610 0.639
typ. 0.530
0.170 0.216
typ. 0.157
0.215 BSC
0.780 0.799
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
2
1
3
IXYS reserves the right to change limits, test conditions and dimensions.
20160308
© 2016 IXYS All rights reserved
4-4
PCB设计
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