19-4293; Rev 0; 10/08
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
General Description
The MAX19999 dual-channel downconverter provides
8.3dB of conversion gain, +24dBm input IP3, +11.4dBm
1dB input compression point, and a noise figure of
10.5dB for 3000MHz to 4000MHz WiMAX™ and LTE
diversity receiver applications. With an optimized LO fre-
quency range of 2650MHz to 3700MHz, this mixer is
ideal for low-side LO injection architectures.
In addition to offering excellent linearity and noise per-
formance, the MAX19999 also yields a high level of
component integration. This device includes two dou-
ble-balanced passive mixer cores, two LO buffers, and
a pair of differential IF output amplifiers. Integrated on-
chip baluns allow for single-ended RF and LO inputs.
The MAX19999 requires a nominal LO drive of 0dBm
and a typical supply current of 388mA at V
CC
= +5.0V
or 279mA at V
CC
= +3.3V.
The MAX19999 is pin compatible with the MAX19997A
1800MHz to 2900MHz mixer and pin similar with the
MAX19985/MAX19985A and MAX19995/MAX19995A
series of 700MHz to 2200MHz mixers, making this
entire family of downconverters ideal for applications
where a common PCB layout is used across multiple
frequency bands.
The MAX19999 is available in a compact 6mm x 6mm,
36-pin thin QFN package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from T
C
= -40°C to +85°C.
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Features
3000MHz to 4000MHz RF Frequency Range
2650MHz to 3700MHz LO Frequency Range
50MHz to 500MHz IF Frequency Range
8.3dB Conversion Gain
+24dBm Input IP3
10.5dB Noise Figure
+11.4dBm Input 1dB Compression Point
74dBc Typical 2 x 2 Spurious Rejection at
P
RF
= -10dBm
Dual Channels Ideal for Diversity Receiver
Applications
Integrated LO Buffer
Integrated LO and RF Baluns for Single-Ended
Inputs
Low -3dBm to +3dBm LO Drive
Pin Compatible with the MAX19997A 1800MHz to
2900MHz Mixer
Pin Similar to the MAX9995/MAX9995A and
MAX19995/MAX19995A 1700MHz to 2200MHz
Mixers and the MAX9985/MAX9985A and
MAX19985/MAX19985A 700MHz to 1000MHz
Mixers
39dB Channel-to-Channel Isolation
Single +5.0V or +3.3V Supply
External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19999
Applications
3.5GHz WiMAX and LTE Base Stations
Fixed Broadband Wireless Access
Microwave Links
Wireless Local Loop
Private Mobile Radios
Military Systems
Pin Configuration/Functional Diagram and Typical
Application Circuit appear at end of data sheet.
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Ordering Information
PART
MAX19999ETX+
MAX19999ETX+T
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
36 Thin QFN-EP*
36 Thin QFN-EP*
+Denotes
a lead-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19999
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (V
CC
+ 0.3V)
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF and LO are DC shorted to GND
through balun).................................................................50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
θ
JA
(Notes 2, 3)..............................................................+38°C/W
θ
JC
(Note 3).....................................................................7.4°C/W
Operating Case Temperature Range
(Note 4) ...................................................T
C
= -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
no input RF or LO signals applied, V
CC
= +4.75V to +5.25V, T
C
= -40°C to +85°C. Typical values are at
V
CC
= +5.0V, T
C
= +25°C, unless otherwise noted. R1 = R4 = 750Ω, R2 = R5 = 698Ω.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
Total supply current
CONDITIONS
MIN
4.75
TYP
5
388
MAX
5.25
420
UNITS
V
mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, no input RF or LO signals applied, T
C
= -40°C to +85°C. Typical values are at
V
CC
= +3.3V, T
C
= +25°C, unless otherwise noted. R1 = R4 = 1.1kΩ; R2 = R5 = 845Ω.) (Note 5)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
(Note 6)
Total supply current
CONDITIONS
MIN
3
TYP
3.3
279
MAX
3.6
UNITS
V
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
LO Frequency
SYMBOL
f
RF
f
LO
(Notes 5, 7)
(Notes 5, 7)
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the
Typical
Application Circuit,
IF matching
components affect the IF frequency range
(Notes 5, 7)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 7)
LO Drive Level
P
LO
(Note 7)
CONDITIONS
MIN
3000
2650
TYP
MAX
4000
3700
UNITS
MHz
MHz
100
500
MHz
IF Frequency
f
IF
50
-3
250
+3
dBm
2
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19999
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= -5dBm, f
RF
= 3200MHz to 3900MHz, f
LO
= 2800MHz to 3600MHz, f
IF
= 350MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical val-
ues are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 3550MHz, f
LO
= 3200MHz, f
IF
= 350MHz, T
C
= +25°C, unless otherwise
noted.) (Note 8)
PARAMETER
Conversion Gain
Conversion Gain Flatness
Gain Variation Over Temperature
Input Compression Point
TC
CG
IP
1dB
SYMBOL
G
C
CONDITIONS
T
C
= +25°C (Notes 6, 9)
f
RF
= 3200MHz to 3900MHz, over any
100MHz band
f
RF
= 3200MHz to 3900MHz, T
C
= -40°C to
+85°C
(Notes 6, 9, 10)
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone
(Notes 6, 9)
Third-Order Input Intercept Point
IIP3
f
RF
= 3550MHz, f
RF1
- f
RF2
= 1MHz,
P
RF
= -5dBm per tone, T
C
= +25°C
(Notes 6, 9)
f
RF1
- f
RF2
= 1MHz, T
C
= -40°C to +85°C
Single sideband, no blockers present
(Notes 5, 6)
Noise Figure
NF
SSB
Single sideband, no blockers present,
f
RF
= 3500MHz, T
C
= +25°C (Notes 5, 6)
Single sideband, no blockers present,
T
C
= -40°C to +85°C
f
BLOCKER
= 3700MHz, P
BLOCKER
= 8dBm,
f
RF
= 3450MHz, f
LO
= 3100MHz, P
LO
= 0dBm,
V
CC
= 5.0V, T
C
= +25°C (Notes 5, 6, 11)
P
RF
= -10dBm,
f
RF
= 3500MHz, f
LO
=
(Notes 5, 6)
3150MHz, f
SPUR
= f
LO
+
P
RF
= -5dBm,
175MHz, T
C
= +25°C
(Notes 6, 9)
P
RF
= -10dBm,
f
RF
= 3500MHz, f
LO
=
(Notes 5, 6)
3150MHz, f
SPUR
= f
LO
+
116.67MHz, T
C
= +25°C P
RF
= -5dBm,
(Notes 6, 9)
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Z
IF
Nominal differential impedance at the IC’s
IF outputs
68
63
77
67
9.8
21.6
MIN
7.3
TYP
8.3
0.15
-0.01
11.4
24.3
dBm
22
24.3
MAX
9.3
UNITS
dB
dB
dB/°C
dBm
Third-Order Input Intercept Point
Variation Over Temperature
±0.3
10.5
10.5
0.018
13
dBm
dB
11.5
dB/°C
Noise Figure Temperature
Coefficient
Noise Figure Under Blocking
Conditions
TC
NF
NF
B
21
25
dB
74
dBc
69
86
dBc
76
15.4
14
200
dB
dB
Ω
2RF-2LO Spurious Rejection
2x2
3RF-3LO Spurious Rejection
3x3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
_______________________________________________________________________________________
3
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19999
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
CC
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm,
P
RF
= -5dBm, f
RF
= 3200MHz to 3900MHz, f
LO
= 2800MHz to 3600MHz, f
IF
= 350MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical val-
ues are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 3550MHz, f
LO
= 3200MHz, f
IF
= 350MHz, T
C
= +25°C, unless otherwise
noted.) (Note 8)
PARAMETER
SYMBOL
CONDITIONS
RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the
Typical
Application Circuit
MIN
TYP
MAX
UNITS
IF Output Return Loss
18
dB
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN), relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 6, 9)
(Notes 6, 9)
28
-31
-30
-23
-24
dB
dBm
dBm
dBm
Channel Isolation
36
39
dB
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
typical values are at V
CC
= +3.3V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 3550MHz, f
LO
= 3200MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 8)
PARAMETER
Conversion Gain
Conversion Gain Flatness
Gain Variation Over Temperature
Input Compression Point
Third-Order Input Intercept Point
Third-Order Input Intercept
Variation Over Temperature
Noise Figure
Noise Figure Temperature
Coefficient
2RF-2LO Spurious Rejection
3RF-3LO Spurious Rejection
RF Input Return Loss
LO Input Return Loss
NF
SSB
TC
NF
2x2
3x3
TC
CG
IP
1dB
IIP3
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone
f
RF1
- f
RF2
= 1MHz, T
C
= -40°C to +85°C
Single sideband, no blockers present
Single sideband, no blockers present,
T
C
= -40°C to +85°C
f
SPUR
= f
LO
+ 175MHz
f
SPUR
= f
LO
+ 116.67MHz
P
RF
= -10dBm
P
RF
= -5dBm
P
RF
= -10dBm
P
RF
= -5dBm
SYMBOL
G
C
f
RF
= 3200MHz to 3900MHz, over any
100MHz band
f
RF
= 3200MHz to 3900MHz, T
C
= -40°C to
+85°C
CONDITIONS
MIN
TYP
8.0
0.15
-0.01
8.4
20.3
±0.3
10.5
0.018
74
69
75
65
16
15.5
MAX
UNITS
dB
dB
dB/°C
dBm
dBm
dBm
dB
dB/°C
dBc
dBc
dB
dB
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
4
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
typical values are at V
CC
= +3.3V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 3550MHz, f
LO
= 3200MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 8)
PARAMETER
IF Output Impedance
SYMBOL
Z
IF
CONDITIONS
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the
Typical
Application Circuit
MIN
TYP
200
MAX
UNITS
Ω
MAX19999
IF Output Return Loss
19
dB
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
Channel Isolation
RFMAIN (RFDIV) converted power measured
at IFDIV (IFMAIN), relative to IFMAIN (IFDIV),
all unused ports terminated to 50Ω
28
-36
-34
-27
38.5
dB
dBm
dBm
dBm
dB
Note 5:
Note 6:
Note 7:
Not production tested.
Guaranteed by design and characterization.
Operation outside this range is possible, but with degraded performance of some parameters. See the
Typical Operating
Characteristics
section.
Note 8:
All limits reflect losses of external components, including a 0.9dB loss at f
IF
= 350MHz due to the 4:1 impedance trans-
former. Output measurements were taken at IF outputs of the
Typical Application Circuit.
Note 9:
100% production tested for functional performance.
Note 10:
Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 11:
Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:
Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
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