19-4253; Rev 0; 12/08
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19995 dual-channel downconverter provides
9dB of conversion gain, +24.8dBm input IP3,
+13.3dBm 1dB input compression point, and a noise
figure as low as 9dB for 1700MHz to 2200MHz diversity
receiver applications. With an optimized LO frequency
range of 1400MHz to 2000MHz, this mixer is ideal for
low-side LO injection architectures. High-side LO injec-
tion is supported by the MAX19995A, which is pin-pin
and functionally compatible with the MAX19995.
In addition to offering excellent linearity and noise per-
formance, the MAX19995 also yields a high level of
component integration. This device includes two dou-
ble-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differen-
tial IF output amplifiers. Integrated on-chip baluns allow
for single-ended RF and LO inputs.
The MAX19995 requires a nominal LO drive of 0dBm
and a typical supply current of 297mA at V
CC
= 5.0V or
212mA at V
CC
= 3.3V.
The MAX19995/MAX19995A are pin compatible with
the MAX19985/MAX19985A series of 700MHz to
1000MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1800MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.
The MAX19995 is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per-
formance is guaranteed over the extended temperature
range, from T
C
= -40°C to +85°C.
Features
♦
1700MHz to 2200MHz RF Frequency Range
♦
1400MHz to 2000MHz LO Frequency Range
♦
1750MHz to 2700MHz LO Frequency Range
(MAX19995A)
♦
50MHz to 500MHz IF Frequency Range
♦
9dB Typical Conversion Gain
♦
9dB Typical Noise Figure
♦
+24.8dBm Typical Input IP3
♦
+13.3dBm Typical Input 1dB Compression Point
♦
79dBc Typical 2RF-2LO Spurious Rejection at
P
RF
= -10dBm
♦
Dual Channels Ideal for Diversity Receiver
Applications
♦
49dB Typical Channel-to-Channel Isolation
♦
Low -3dBm to +3dBm LO Drive
♦
Integrated LO Buffer
♦
Internal RF and LO Baluns for Single-Ended
Inputs
♦
Built-In SPDT LO Switch with 56dB LO-to-LO
Isolation and 50ns Switching Time
♦
Pin Compatible with the MAX19985/MAX19985A/
MAX19995A Series of 700MHz to 2200MHz Mixers
♦
Pin Similar to the MAX19997A/MAX19999 Series
of 1800MHz to 4000MHz Mixers
♦
Single +5.0V or +3.3V Supply
♦
External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19995
Applications
UMTS/WCDMA/LTE Base Stations
cdma2000
®
Base Stations
DCS1800 and EDGE Base Stations
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Pin Configuration and Typical Application Circuit appear at
end of data sheet.
Ordering Information
PART
MAX19995ETX+
MAX19995ETX+T
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
36 Thin QFN-EP*
36 Thin QFN-EP*
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
cdma2000 is a registered trademark of Telecommunications Industry Association.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
MAX19995
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (V
CC
+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun)...............................................................50mA
Continuous Power Dissipation (Note 1) ...............................8.7W
θ
JA
(Notes 2, 3)..............................................................+38°C/W
θ
JC
(Notes 1, 3)...............................................................7.4°C/W
Operating Case Temperature Range
(Note 4) .............................................................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the DCS/PCS band, V
CC
= +4.75V to +5.25V, T
C
= -40°C to +85°C. R1 = R4 = 806Ω, R2 =
R5 = 2.32kΩ. Typical values are at V
CC
= +5.0V, T
C
= +25°C, unless otherwise noted. All parameters are production tested.)
PARAMETER
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
LOSEL Input Current
SYMBOL
V
CC
I
CC
V
IH
V
IL
I
IH
and I
IL
-10
Total supply current, V
CC
= +5.0V
2
0.8
+10
CONDITIONS
MIN
4.75
TYP
5
297
MAX
5.25
370
UNITS
V
mA
V
V
µA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +3.0V to +3.6V, T
C
= -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ. Typical values are at
V
CC
= +3.3V, T
C
= +25°C, unless otherwise noted. All parameters are guaranteed by design and not production tested.)
PARAMETER
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
SYMBOL
V
CC
I
CC
V
IH
V
IL
Total supply current, V
CC
= +3.3V
CONDITIONS
MIN
3.0
TYP
3.3
212
2
0.8
MAX
3.6
UNITS
V
mA
V
V
2
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
LO Frequency
SYMBOL
f
RF
f
LO
(Note 5)
(Note 5)
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the typical
application circuit, IF matching components
affect the IF frequency range (Note 5)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 5)
LO Drive Level
P
LO
CONDITIONS
MIN
1700
1400
TYP
MAX
2200
2000
UNITS
MHz
MHz
MAX19995
100
500
MHz
IF Frequency
f
IF
50
-3
250
+3
MHz
dBm
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, V
CC
= +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF = -5dBm, f
RF
= 1700MHz to 2000MHz, f
LO
= 1510MHz to
1810MHz, f
IF
= 190MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm,
fRF = 1800MHz, f
LO
= 1610MHz, f
IF
= 190MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
T
C
= +25°C
Conversion Gain
G
C
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
LO
= 1760MHz, f
RF
= 1950MHz
Flatness over any one of three frequency
bands:
f
RF
= 1710MHz to 1785MHz
f
RF
= 1850MHz to 1910MHz
f
RF
= 1920MHz to 1980MHz
TC
CG
f
RF
= 1700MHz to 2000MHz,
f
LO
= 1510MHz to 1810MHz,
f
IF
= 190MHz, T
C
= -40°C to +85°C
f
RF
= 1700MHz for min value
Input Compression Point
(Note 7)
IP
1dB
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
LO
= 1760MHz, f
IF
= 190MHz,
f
RF
= 1950MHz
9.5
CONDITIONS
MIN
7
7.8
TYP
9
9
8.9
MAX
11
10.2
dB
UNITS
Conversion Gain Flatness
±0.1
dB
Gain Variation Over Temperature
-0.009
12.5
dB/°C
13.3
dBm
_______________________________________________________________________________________
3
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
MAX19995
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, V
CC
= +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF = -5dBm, f
RF
= 1700MHz to 2000MHz, f
LO
= 1510MHz to
1810MHz, f
IF
= 190MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm,
fRF = 1800MHz, f
LO
= 1610MHz, f
IF
= 190MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone,
f
RF
= 2000MHz for min value
f
IF
= 190MHz, f
LO
= 1810MHz, f
RF
=
2000MHz for min value, f
RF1
- f
RF2
= 1MHz,
P
RF
= -5dBm per tone, T
C
= +25°C to
+85°C
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
LO
= 1760MHz, f
IF
= 190MHz,
f
RF
= 1950MHz, f
RF1
- f
RF2
= 1MHz,
P
RF
= -5dBm per tone
Input Intercept Variation Over
Temperature
TC
IIP3
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone,
T
C
= -40°C to +85°C
Single sideband, no blockers present
(Note 8)
f
LO
= 1610MHz, f
IF
= 190MHz,
f
RF
= 1800MHz, T
C
= +25°C, P
LO
= 0dBm,
single sideband, no blockers present
(Note 8)
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω , R2 = R5 =
1.5kΩ), f
IF
= 190MHz, f
LO
= 1760MHz,
f
RF
= 1950MHz, single sideband, no
blockers present
Noise Figure Temperature
Coefficient
TC
NF
Single sideband, no blockers present,
T
C
= -40°C to +85°C
f
BLOCKER
= 1900MHz, P
BLOCKER
=
+8dBm, f
RF
= 1800MHz, f
LO
= 1610MHz,
P
LO
= 0dBm, V
CC
= +5.0V, T
C
= +25°C
(Notes 8, 9)
MIN
20.5
TYP
23.7
MAX
UNITS
21.5
23.7
dBm
Input Intercept Point
IIP3
24.8
0.0035
9
11
dBm/°C
9
9.6
dB
Noise Figure
NF
SSB
9.3
0.016
dB/°C
Noise Figure with Blocker
NF
B
19
20.5
dB
4
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, V
CC
= +4.75V to +5.25V, RF and
LO ports are driven from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF = -5dBm, f
RF
= 1700MHz to 2000MHz, f
LO
= 1510MHz to
1810MHz, f
IF
= 190MHz, f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm,
fRF = 1800MHz, f
LO
= 1610MHz, f
IF
= 190MHz, T
C
= +25°C, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
RF
= -10dBm (Note 8)
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
RF
= -5dBm (Note 8)
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
LO
= 0dBm, P
RF
= -10dBm,
V
CC
= +5.0V, T
C
= +25°C (Note 8)
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
LO
= 0dBm, P
RF
= -5dBm, V
CC
= +5.0V,
T
C
= +25°C (Note 8)
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
IF
= 190MHz, f
LO
= 1760MHz,
f
RF
= 1950MHz, P
RF
= -10dBm
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
IF
= 190MHz, f
LO
= 1760MHz,
f
RF
= 1950MHz, P
RF
= -5dBm
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
RF
= -10dBm (Note 8)
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
RF
= -5dBm (Note 8)
f
RF
= 1800MHz, f
LO
= 1610MHz,
P
LO
= 0dBm, P
RF
= -10dBm,
V
CC
= +5.0V, T
C
= +25
o
C (Note 8)
f
RF
= 1800MHz, f
LO
= 1600MHz,
P
LO
= 0dBm, P
RF
= -5dBm, V
CC
= +5.0V,
T
C
= +25°C (Note 8)
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
IF
= 190MHz, f
LO
= 1760MHz,
f
RF
= 1950MHz, P
RF
= -10dBm
Typical Application Circuit
optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), f
IF
= 190MHz, f
LO
= 1760MHz,
f
RF
= 1950MHz, P
RF
= -5dBm
77
67
MIN
54
49
TYP
79
74
MAX
UNITS
MAX19995
56
79
2RF-2LO Spur Rejection
2x2
51
74
dBc
79
74
91
81
79
91
3RF-3LO Spur Rejection
3x3
69
81
dBc
86
76
_______________________________________________________________________________________
5
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