1.1A HALF BRDG BASED MOSFET DRIVER, PDSO24, PLASTIC, MS-013AD, SOIC-24
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | SOIC |
| 包装说明 | SOIC-24 |
| 针数 | 24 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 其他特性 | JUNCTION TEMPERATURE FOR TEST |
| 高边驱动器 | YES |
| 接口集成电路类型 | HALF BRIDGE BASED MOSFET DRIVER |
| JESD-30 代码 | R-PDSO-G24 |
| JESD-609代码 | e0 |
| 长度 | 15.4 mm |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 标称输出峰值电流 | 1.1 A |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.65 mm |
| 最大供电电压 | 15 V |
| 最小供电电压 | 7 V |
| 标称供电电压 | 12 V |
| 表面贴装 | YES |
| 温度等级 | AUTOMOTIVE |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 断开时间 | 0.1 µs |
| 接通时间 | 0.1 µs |
| 宽度 | 7.5 mm |
| Base Number Matches | 1 |
| HIP4086AB-T | HIP4086AB-T13 | HIP4086ABZ-T | HIP4086ABZ-T13 | HIP4086APZ-T13 | |
|---|---|---|---|---|---|
| 描述 | 1.1A HALF BRDG BASED MOSFET DRIVER, PDSO24, PLASTIC, MS-013AD, SOIC-24 | HALF BRDG BASED MOSFET DRIVER | 1.1A HALF BRDG BASED MOSFET DRIVER, PDSO24, ROHS COMPLIANT, PLASTIC, MS-013AD, SOIC-24 | HALF BRDG BASED MOSFET DRIVER | HALF BRDG BASED MOSFET DRIVER |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| Reach Compliance Code | not_compliant | unknown | compliant | compliant | compliant |
| 接口集成电路类型 | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER |
| 是否Rohs认证 | 不符合 | - | 符合 | 符合 | 符合 |
| JESD-609代码 | e0 | - | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | - | 3 | 3 | - |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| Base Number Matches | 1 | 1 | 1 | 1 | - |
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