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HN1K04FU(TE85L)

产品描述HN1K04FU(TE85L)
产品类别分立半导体    晶体管   
文件大小180KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN1K04FU(TE85L)概述

HN1K04FU(TE85L)

HN1K04FU(TE85L)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
Base Number Matches1

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HN1K04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.8 to 2.5 V
Switching speed is fast.
Suitable for high-density mounting because of a compact package.
(Q1, Q2 common)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
50
10
50
200
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: TOTAL rating
1
2007-11-01

HN1K04FU(TE85L)相似产品对比

HN1K04FU(TE85L) HN1K04FU(TE85L,F)
描述 HN1K04FU(TE85L) HN1K04FU(TE85L,F)
厂商名称 Toshiba(东芝) Toshiba(东芝)
Reach Compliance Code unknown unknown
Base Number Matches 1 1

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