Si7401DN
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.021 @ V
GS
= –4.5 V
–20
0.028 @ V
GS
= –2.5 V
0.034 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–11
–9.8
–8.9
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
New PowerPAKt Package
– Low Thermal Resistance, R
thJC
– Low 1.07-mm Profile
APPLICATIONS
D
Load/Power Switching In Cell Phones and Pagers
D
PA Switch for Cellular Devices
D
Battery Operated Systems
S
S S
PowerPAKt 1212-8
3.30 mm
S
1
2
3
S
S
3.30 mm
G
4
G
P-Channel MOSFET
D
8
7
6
5
D
D
D
Bottom View
D D
D D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
–3.2
3.8
2.0
–55 to 150
–8.2
–30
–1.3
1.5
0.8
W
_C
–5.2
A
Symbol
V
DS
V
GS
10 secs
Steady State
–20
"8
Unit
V
–11
–7.3
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71423
S-03311—Rev. A, 26-Mar-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
C/W
1
Si7401DN
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –2 mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –11 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –9.8 A
V
GS
= –1.8 V, I
D
= –2 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –15 V, I
D
= –11 A
I
S
= –3.2 A, V
GS
= 0 V
–30
0.017
0.022
0.027
31
–0.8
–1.2
0.021
0.028
0.034
S
V
W
–0.45
"100
–1
–5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –3.2 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –11 A
29
5.9
5.2
23
45
130
95
30
35
70
195
140
60
ns
44
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2 V
30
Transfer Characteristics
25
25
I
D
– Drain Current (A)
20
I
D
– Drain Current (A)
20
15
1.5 V
10
15
10
T
C
= 125_C
25_C
5
1V
0
0
1
2
3
4
5
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71423
S-03311—Rev. A, 26-Mar-01
Si7401DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
5000
Vishay Siliconix
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.05
C – Capacitance (pF)
4000
C
iss
0.04
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
3000
0.03
2000
0.02
0.01
1000
C
oss
C
rss
0
4
8
12
16
20
0.00
0
5
10
15
20
25
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 11 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 11 A
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
1.2
2
1.0
1
0.8
0
0
7
14
21
28
35
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.06
30
0.05
I
S
– Source Current (A)
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
On-Resistance vs. Gate-to-Source Voltage
0.04
I
D
= 11 A
10
0.03
T
J
= 25_C
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71423
S-03311—Rev. A, 26-Mar-01
www.vishay.com
3
Si7401DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
I
D
= 2 mA
40
50
Single Pulse Power, Juncion-To-Ambient
0.3
V
GS(th)
Variance (V)
Power (W)
0.2
30
0.1
20
0.0
10
–0.1
–0.2
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
www.vishay.com
4
Document Number: 71423
S-03311—Rev. A, 26-Mar-01
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