MJD44H11A
29 July 2019
80 V, 8 A NPN high power bipolar transistor
Product data sheet
1. General description
NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic
package.
PNP complement: MJD45H11A
2. Features and benefits
•
•
•
•
•
•
High thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD44H series
Low collector emitter saturation voltage
Fast switching speeds
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
CEO
I
C
I
CM
h
FE
collector-emitter
voltage
collector current
peak collector current
DC current gain
single pulse; t
p
≤ 1 ms
V
CE
= 1 V; I
C
= 2 A; T
amb
= 25 °C
Conditions
Min
-
-
-
60
Typ
-
-
-
-
Max
80
8
16
-
Unit
V
A
A
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
B
C
E
C
base
collector
emitter
mounting base; connected
to collector
1
2
3
Simplified outline
mb
Graphic symbol
E
B
C; mb
aaa-029889
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
MJD44H11A
DPAK
Description
Version
plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428
2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body
7. Marking
Table 4. Marking codes
Type number
MJD44H11A
Marking code
MJD44H11A
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC601134).
Symbol
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open collector
single pulse; t
p
≤ 1 ms
T
mb
≤ 25 °C
T
amb
≤ 25 °C
[1]
[2]
Min
-
-
-
-
-
-
-
-55
-65
Max
80
6
8
16
20
1.75
150
150
150
Unit
V
V
A
A
W
W
°C
°C
°C
Total power dissipation junction to mounting base.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm .
MJD44H11A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
2 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
2.0
P
tot
(W)
1.5
aaa-029825
1.0
0.5
0
-50
0
50
100
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 1.
Power derating curves SOT428
150
200
T
amb
(°C)
2
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
R
th(j-mb)
Conditions
Min
-
Typ
-
Max
6.25
Unit
K/W
thermal resistance from in free air
junction to mounting
base
thermal resistance from
junction to ambient
[1]
R
th(j-a)
[1]
-
-
72
2
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm .
10
2
Z
th(j-a)
(K/W)
10
aaa-029826
duty cycle = 1
0.50
0.25
0.10
0.05
0.02
0.01
0.75
0.33
0.20
1
0
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
MJD44H11A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
3 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
t
on
t
s
t
f
t
off
C
c
f
T
Conditions
Min
-
-
-
60
40
-
-
-
-
-
-
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A; f = 1 MHz;
T
amb
= 25 °C
V
CE
= 10 V; I
C
= 500 mA; f = 100 MHz;
T
amb
= 25 °C
aaa-029827
(1)
Typ
-
-
-
-
-
-
-
300
250
170
420
30
160
Max
1
50
1
-
-
1
1.5
-
-
-
-
-
-
Unit
µA
µA
µA
collector-emitter cut-off V
CE
= 64 V; V
BE
= 0 V; T
amb
= 25 °C
current
V
CE
= 64 V; V
BE
= 0 V; T
j
= 150 °C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= 1 V; I
C
= 2 A; T
amb
= 25 °C
V
CE
= 1 V; I
C
= 4 A; T
amb
= 25 °C
I
C
= 8 A; I
B
= 400 mA; T
amb
= 25 °C
V
V
ns
ns
ns
ns
pF
MHz
base-emitter saturation I
C
= 8 A; I
B
= 800 mA; T
amb
= 25 °C
voltage
turn-on time
storage time
fall time
turn-off time
collector capacitance
transition frequency
I
C
= 5 A; I
Bon
= 0.5 mA; I
Boff
= -0.5 mA;
V
CC
= 12.5 V; T
amb
= 25 °C
-
-
400
h
FE
300
(2)
8
I
C
(A)
6
I
B
(mA) = 140
aaa-029828
120
100
80
60
40
50
30
20
200
(3)
4
100
2
10
0
10
10
2
10
3
I
C
(mA)
10
4
0
0
1
2
3
4
V
CE
(V)
5
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3.
DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 4.
Collector current as a function of collector-
emitter voltage; typical values
MJD44H11A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
4 / 12
Nexperia
MJD44H11A
80 V, 8 A NPN high power bipolar transistor
aaa-029829
1.2
V
BE
(V)
0.8
(1)
(2)
1.6
V
BEsat
(V)
1.2
aaa-029830
(1)
0.8
0.4
(3)
(2)
0.4
(3)
0
1
10
10
2
10
3
I
C
(mA)
10
4
0
1
10
10
2
10
3
I
C
(mA)
10
4
V
CE
= 5 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 5.
Base-emitter voltage as a function of collector
current; typical values
1
V
CEsat
(V)
10
-1
(1)
(2)
(3)
aaa-029831
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6.
Base-emitter saturation voltage as a function of
collector current; typical values
10
3
aaa-029832
f
T
(Mhz)
10
2
10
-2
10
-3
1
10
10
2
10
3
I
C
(mA)
10
4
10
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= 2 V
T
amb
= 25 °C
Fig. 8.
Transition frequency as a function of collector
current; typical values
MJD44H11A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
29 July 2019
5 / 12
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