DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1870
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1870 is a switching device which can be
driven directly by a 2.5-V power source.
The
µ
PA1870 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
Can be driven by a 2.5-V power source
•
Low on-state resistance
R
DS(on)1
= 20.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 21.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 27.0 mΩ MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1870GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note 1
Note 2
EQUIVALENT CIRCUIT
20
±12
±6.0
±80
2.0
150
V
V
A
A
W
°C
°C
Gate1
Gate
Protection
Diode
Source1
Drain1
Drain2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Body
Diode
Gate2
Gate
Protection
Diode
Source2
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 50 cm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14886EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000
µ
PA1870
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 4.0 V
I
D
= 6.0 A
I
F
= 6.0 A, V
GS
= 0 V
I
F
= 6.0 A, V
GS
= 0 V
di/dt = 50 A /
µ
s
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 4.5 V, I
D
= 3.0 A
V
GS
= 4.0 V, I
D
= 3.0 A
V
GS
= 2.5 V, I
D
= 3.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 3.0 A
V
GS(on)
= 4.0 V
R
G
= 10
Ω
0.5
5
12.0
13.0
15.0
15.0
15.5
20.8
900
295
170
55
210
300
340
10
2
6
0.80
400
1000
20.0
21.0
27.0
1.0
MIN.
TYP.
MAX.
10
±10
1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
V
GS
V
GS
Wave Form
0
10%
V
GS
(on)
90%
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
90%
90%
PG.
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G14886EJ2V0DS
µ
PA1870
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
5
100
FORWARD BIAS SAFE OPERATING AREA
d
ite )
im .5 V
)
L 4
I
D(pulse)
on
=
S(
S
R
D
V
G
(@
PW
1m
s
10
ms
=1
0
µ
s
dT - Derating Factor - %
I
D
- Drain Current - A
10
I
D(DC)
60
1
10
0m
s
DC
40
20
0.1
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1 : 1
0
0
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
0.01
0.1
1.0
10.0
100.0
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
V
GS
= 4.5 V
20
FORWARD TRANSFER CHARACTERISTICS
100
10
V
DS
= 10 V
I
D
- Drain Current - A
V
GS
= 4.0 V
15
I
D
- Drain Current - A
T
A
= 125˚C
1
0.1
0.01
0.001
0.0001
25˚C
75˚C
−25˚C
10
V
GS
= 2.5 V
5
0
0
0.1
0.2
0.3
0.4
0.5
0.00001
0
0.5
1
1.5
2
2.5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
100
V
DS
= 10 V
1.5 V
DS
= 10 V
I
D
= 1mA
V
GS(off)
- Gate Cut-off Voltage - V
10
1
1
0.1
T
A
=
−25
˚C
25
˚C
75
˚C
125
˚C
0.5
−50
0
50
100
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
Data Sheet G14886EJ2V0DS
3
µ
PA1870
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
V
GS
= 4.0 V
T
A
= 125˚C
20
75˚C
25˚C
−25˚C
10
30
T
A
= 125˚C
75˚C
20
25˚C
−25˚C
10
0.01
0.1
1
10
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
30
V
GS
= 4.5 V
R
DS (on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
I
D
= 3.0 A
20
T
A
= 125˚C
75˚C
25˚C
−25˚C
V
GS
= 2.5 V
20
4.0 V
10
4.5 V
0
0.01
0.1
1
10
100
10
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
= 3.0 A
f = 1 MHz
40
1000
30
C
iss
20
100
C
oss
C
rss
10
0
0
2
4
6
8
10
12
10
0.1
1
10
100
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
4
Data Sheet G14886EJ2V0DS
µ
PA1870
SWITCHING CHARACTERISTICS
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
I
F
- Source to Drain Current - A
V
GS
= 0V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d(off)
t
f
t
r
100
t
d(on)
10
1
0.1
10
0.1
V
DD
= 10 V
V
GS(on)
= 4 V
R
G
= 10
Ω
1
I
D
- Drain Current - A
10
0.01
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS
6
V
GS
- Gate to Source Voltage - V
I
D
= 6.0 A
5
4
3
2
1
0
0
V
DD
= 16 V
10 V
1
2
3
4 5 6 7
Q
g
- Gate Charge - nC
8
9
10
5
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
100
62.5˚C/W
10
1
Single Pulse
Mounted on Ceramic Board of
50 cm
2
x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1 : 1
0.1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet G14886EJ2V0DS
5
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