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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2712GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2712GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
1.8 MAX.
•
Low on-state resistance
R
DS(on)1
= 13 mΩ MAX. (V
GS
=
−
10 V, I
D
=
−
5.0 A)
R
DS(on)2
= 21 mΩ MAX. (V
GS
=
−
4.5 V, I
D
=
−
5.0 A)
R
DS(on)3
= 26 mΩ MAX. (V
GS
=
−
4.0 V, I
D
=
−
5.0 A)
•
Low C
iss
: C
iss
= 2000 pF TYP.
•
Small and surface mount package (Power SOP8)
FEATURES
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.44
0.15
0.05 MIN.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2712GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−
30
V
V
A
A
W
W
°C
°C
A
mJ
Source
Gate
Body
Diode
m20
m10
m40
2
2
150
−
55 to +150
−
10
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
Remark
Note4
Note4
I
AS
E
AS
10
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
Starting T
ch
= 25°C, V
DD
=
−
15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
=
−
20
→
0 V
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No.
G15980EJ2V0DS00 (2nd edition)
Date Published November 2002 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
2002
MEMS传感器
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