RN1321A∼RN1327A
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1321A,RN1322A,RN1323A,RN1324A
RN1325A,RN1326A,RN1327A
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
High current driving is possible.
Since bias resisters are built in the transistor,the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN2321A to RN2327A
Low V
CE(sat)
enable to be low power dissipation on high current driving.
Unit: mm
Equivalent Circuit And Bias Resistance Values
Type No.
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
JEITA
TOSHIBA
Weight: 6 mg (typ.)
⎯
SC-70
2-2E1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1321A to 1327A
RN1321A to 1324A
Emitter-base voltage
RN1325A, 1326A
RN1327A
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1321A to 1327A
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
15
12
10
5
6
500
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06
嵌入式系统
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