RN1710,RN1711
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1710,RN1711
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2710 and RN2711
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
5
100
200
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
USV
JEDEC
―
JEITA
―
TOSHIBA
2−2L1A
Weight: 6.2 mg (typ.)
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1
2010-05-21
RN1710,RN1711
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1710
RN1711
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
―
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1MHz
―
Min
―
―
120
―
―
―
3.29
7
Typ.
―
―
―
0.1
250
3
4.7
10
Max
100
100
700
0.3
―
6
6.11
13
Unit
nA
nA
―
V
MHz
pF
kΩ
2
2010-05-21
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