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RN1115F(TE85L)

产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
产品类别分立半导体    晶体管   
文件大小209KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1115F(TE85L)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

RN1115F(TE85L)规格参数

参数名称属性值
是否Rohs认证不符合
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)50
元件数量1
极性/信道类型NPN
最大功率耗散 (Abs)0.1 W
表面贴装YES
晶体管元件材料SILICON
Base Number Matches1

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RN1114F~RN1118F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1114F,RN1115F,RN1116F,RN1117F,RN1118F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114F to 2118F
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114F
RN1115F
RN1116F
RN1117F
RN1118F
R
1
(kΩ)
1
2.2
4.7
10
47
R
2
(kΩ)
10
10
10
4.7
10
ESM
JEDEC
JEITA
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1114F to 1118F
RN1114F
RN1115F
Emitter-base voltage
RN1116F
RN1117F
RN1118F
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114F to 1118F
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06

 
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