电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RN1702(TE85L,F)

产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
产品类别分立半导体    晶体管   
文件大小461KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1702(TE85L,F)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353

RN1702(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)50
元件数量2
极性/信道类型NPN
最大功率耗散 (Abs)0.2 W
表面贴装YES
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
RN1701~RN1706
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1701,RN1702,RN1703
RN1704,RN1705,RN1706
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2701 to RN2706
Equivalent Circuit and Bias Resistor Values
Type No.
RN1701
RN1702
RN1703
RN1704
RN1705
RN1706
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USV
JEDEC
JEITA
TOSHIBA
2-2L1A
Weight: 6.2mg (typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1701 to 1706
RN1701 to 1706
RN1701 to 1704
RN1705, 1706
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1
2010-04-02

RN1702(TE85L,F)相似产品对比

RN1702(TE85L,F) RN1704(TE85L,F) RN1705(TE85L,F) RN1701(TE85L,F)
描述 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353 PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
是否Rohs认证 符合 符合 符合 符合
Reach Compliance Code unknown unknown unknown unknown
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
最小直流电流增益 (hFE) 50 80 80 30
元件数量 2 2 2 2
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W
表面贴装 YES YES YES YES
晶体管元件材料 SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1524  1394  1250  2171  131  46  43  41  31  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved