IRL640S, SiHL640S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
66
9.0
38
Single
D
FEATURES
200
0.18
•
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4 V and 5 V
Fast Switching
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
SMD-220
K
G
D
G
S
S
N-Channel
MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
SMD-220 is suitable for high current applications because of
its low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SMD-220
IRL640SPbF
SiHL640S-E3
IRL640S
SiHL640S
SMD-220
IRL640STRLPbF
a
SiHL640STL-E3
a
IRL640STRL
a
SiHL640STL
a
SMD-220
IRL640STRRPbF
a
SiHL640STR-E3
a
IRL640STRR
a
SiHL640STR
a
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
200
± 10
17
11
68
1.0
0.025
580
10
13
125
3.1
5.0
- 55 to + 150
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
I
AR
Repetitive Avalanche Current
a
E
AR
Repetitive Avalanche Energy
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Temperature
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 3.0 mH, R
G
= 25
Ω,
I
AS
= 17 A (see fig. 12).
c. I
SD
≤
17 A, dI/dt
≤
150 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 Material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91306
S-81431-Rev. A, 21-Jul-08
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1
IRL640S, SiHL640S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
62
40
1.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 10 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 5.0 V
V
GS
= 4.0 V
I
D
= 10 A
b
I
D
= 8.5 A
b
200
-
1.0
-
-
-
-
-
16
-
0.27
-
-
-
-
-
-
-
-
-
2.0
± 100
25
250
0.18
0.27
-
V
V/°C
V
nA
µA
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
DS
= 50 V, I
D
= 10 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
1800
400
120
-
-
-
8.0
83
44
52
4.5
7.5
-
-
-
66
9.0
38
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 5.0 V
I
D
= 17 A, V
DS
= 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 100 V, I
D
= 17 A,
R
G
= 4.6
Ω,
R
D
= 5.7
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
310
3.2
17
A
68
2.0
470
4.8
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91306
S-81431-Rev. A, 21-Jul-08
IRL640S, SiHL640S
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91306
S-81431-Rev. A, 21-Jul-08
www.vishay.com
3
IRL640S, SiHL640S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91306
S-81431-Rev. A, 21-Jul-08
IRL640S, SiHL640S
Vishay Siliconix
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
5
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91306
S-81431-Rev. A, 21-Jul-08
www.vishay.com
5
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