IRL630S, SiHL630S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
40
5.5
24
Single
D
200
0.40
•
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 150 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
FEATURES
D
2
PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
D
2
PAK (TO-263)
SiHL630STRR-GE3
a
IRL630STRRPbF
a
SiHL630STR-E3
a
D
2
PAK (TO-263)
SiHL630STRL-GE3
a
IRL630STRLPbF
a
SiHL630STL-E3
a
G
G D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHL630S-GE3
IRL630SPbF
SiHL630S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
200
± 10
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.1
5.0
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25V, starting T
J
= 25 °C, L = 4.6 mH, R
g
= 25
,
I
AS
= 9.0 A (see fig. 12).
c. I
SD
9.0 A, dI/dt
120 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90390
S11-1044-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
TYP.
-
-
-
MAX.
62
40
1.7
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 10 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 5.0 V
V
GS
= 4.0 V
I
D
= 5.4 A
b
I
D
= 4.5 A
b
200
-
1.0
-
-
-
-
-
4.8
-
0.27
-
-
-
-
-
-
-
-
-
2.0
± 100
25
250
0.40
0.50
-
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
S
V
DS
= 50 V, I
D
= 5.4 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
1100
220
70
-
-
-
8.0
57
38
33
4.5
7.5
-
-
-
40
5.5
24
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 9.0 A, V
DS
= 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 100 V, I
D
= 9.0 A,
R
g
= 6.0
,
R
D
= 11
,
see fig. 10
b
-
-
-
-
G
-
S
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
230
1.7
9.0
A
36
2.0
350
2.6
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 9.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.0 A, dI/dt = 100 A/μs
b
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 90390
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
TOP
100
I
D
, Drain-to-Source Current (A)
I , Drain-to-Source Current (A)
D
10
10
T
J
= 150°C
1
T
J
= 25°C
1
2.25V
20μs PULSE WIDTH
Tc = 25°C
0.1
1
10
100
0.1
0.1
A
0.01
2.0
2.5
3.0
3.5
V
DS
= 50V
20μs PULSE WIDTH
4.0
4.5
A
5.0
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
I , Drain-to-Source Current (A)
D
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
2.5
I
D
= 9.0A
2.0
10
1.5
2.25V
1
1.0
0.5
0.1
0.1
1
20μs PULSE WIDTH
T
C
= 150°C
10
100
A
0.0
-60 -40 -20
V
GS
= 5.0V
0
20
40
60
A
80 100 120 140 160
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90390
S11-1044-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
2000
100
C, Capacitance (pF)
1500
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1000
10
T
J
= 150°C
T
J
= 25°C
1
C
oss
500
C
rss
0
1
10
A
100
0.1
0
0.4
0.8
1.2
V
GS
= 0V
A
1.6
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
I
D
= 9.0A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
100
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
8
I
D
, Drain Current (A)
10
100μs
6
1ms
4
1
10ms
100ms
2
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
0.1
1
T
C
= 25°C
T
J
= 150°C
Single Pulse
10
100
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 90390
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL630S, SiHL630S
Vishay Siliconix
10
V
DS
V
GS
R
D
I
D
, Drain Current (Amps)
8
R
g
D.U.T.
+
- V
DD
5V
6
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
4
Fig. 10a - Switching Time Test Circuit
2
V
DS
90 %
0
25
50
75
100
125
150
A
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
P
D M
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
1
t
2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0.0001
0.001
0.01
0.1
1
10
A
A
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90390
S11-1044-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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