Ordering number : ENA0977
FW377
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW377
Features
•
•
General-Purpose Switching Device
Applications
•
For motor drivers, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm
2
✕0.8mm)1unit,
PW≤10s
Mounted on a ceramic board
(1500mm
2
✕0.8mm),
PW≤10s
Conditions
N-channel
35
±20
6
7
10
24
1.8
2.2
150
--55 to +150
P-channel
--35
±20
--5
--6
--10
--20
Unit
V
V
A
A
A
A
W
W
°C
°C
Marking : W377
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2107PA TI IM TC-00001038 No. A0977-1/6
FW377
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
⏐
yfs
⏐
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-
-1mA, VGS=0V
VDS=-
-35V, VGS=0V
VGS=±16V, VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-5A
ID=-
-5A, VGS=-
-10V
ID=-
-3A, VGS=-
-4V
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=-
-20V, VGS=--10V, ID=-
-5A
VDS=-
-20V, VGS=--10V, ID=-
-5A
VDS=-
-20V, VGS=--10V, ID=-
-5A
IS=--5A, VGS=0V
--35
--1
±10
--1.2
4.5
7.5
37
62
1200
190
140
13
47
101
69
24
3.7
5.4
-
-0.85
--1.5
49
87
--2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V(BR)DSS
IDSS
IGSS
VGS(off)
⏐
yfs
⏐
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=10V, ID=6A
IS=6A, VGS=0V
35
1
±10
1.2
4.6
7.8
25
43
1050
150
100
13
43
76
48
20
3.3
4.5
0.84
1.2
33
61
2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm (typ)
7005-003
Electrical Connection
8
7
6
5
8
5
0.3
1
4
0.43
0.2
5.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
4.4
6.0
0.595
1.27
0.1
1.5
1.8 MAX
Top view
No. A0977-2/6
FW377
Switching Time Test Circuit
[N-channel]
10V
0V
VIN
ID=6A
RL=3.3Ω
VIN
VDD=20V
[P-channel]
0V
--10V
VIN
VDD= --20V
VIN
ID= --5A
RL=4Ω
D
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
D
VOUT
G
G
FW377
P.G
50Ω
FW377
P.G
50Ω
S
S
6.0
ID -- VDS
16V
[Nch]
12
11
10
ID -- VGS
VDS=10V
[Nch]
5.5
5.0
6V
3.5
V
4V
10V
Drain Current, ID -- A
Drain Current, ID -- A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
9
8
7
6
5
4
3V
5
°
C
Ta=
7
0
0.5
1.0
1.5
2.0
2.5
3
2
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
--25
3.0
3.5
VGS=2.5V
1
°
C
25
°
C
4.0
Drain-to-Source Voltage, VDS -- V
90
IT13051
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
80
IT13052
[Nch]
Ta=25
°
C
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
70
60
50
40
30
20
10
0
--60
ID=3A
6A
=3A
, ID
=4V
VGS
6A
, I D=
=10V
V GS
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
IT13053
Ambient Temperature, Ta --
°C
10
7
5
3
2
1.0
7
5
3
2
IT13054
⏐
y
fs⏐ -- ID
[Nch]
IS -- VSD
Forward Transfer Admittance,
⏐
y
fs⏐ -- S
7
5
3
2
VDS=10V
[Nch]
VGS=0V
1.0
7
5
3
2
25
°
C
C
5
°
--2
=
Ta
°
C
75
Source Current, IS -- A
°
C
3
2
2
3
5 7
2
3
5 7
2
3
5 7
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT13056
0.1
0.01
0.1
1.0
Drain Current, ID -- A
10
IT13055
Diode Forward Voltage, VSD -- V
Ta=7
5
0.1
7
5
--25
°
C
25
°
C
No. A0977-3/6
FW377
5
3
SW Time -- ID
[Nch]
VDD=20V
VGS=10V
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
Switching Time, SW Time -- ns
2
1000
7
5
3
2
Ciss
100
7
5
3
2
td(off)
tr
td(on)
10
7
5
0.1
tf
Coss
Crss
100
7
5
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10
9
10
IT13057
7
0
5
10
15
20
25
30
35
IT13058
Drain-to-Source Voltage, VDS -- V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
VGS -- Qg
VDS=20V
ID=6A
[Nch]
ASO
IDP=24A
ID=6A
[Nch]
PW≤10µs
10
0
1m
µ
s
s
10
m
s
10
0m
s
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
IT13059
Drain Current, ID -- A
DC
Operation in this
area is limited by RDS(on).
10
op
s
era
tio
n
0.01
0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm)
1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7
Total Gate Charge, Qg -- nC
--16V
--5.0
--4.5
--4.0
ID -- VDS
--4V
--10V
--6V
Drain-to-Source Voltage, VDS -- V
--10
IT13060
[Pch]
ID -- VGS
[Pch]
--3
--3V
.5
V
VDS= --10V
--9
--8
Drain Current, ID -- A
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.1
--7
--6
--5
--4
--3
--2
--1
0
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
Ta=7
5
°
C
-25
°
C
25
°
C
--2.5
--3.0
--3.5
V
V
GS=
--2.5
--4.0
Drain-to-Source Voltage, VDS -- V
140
IT13061
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
120
IT13062
[Pch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
100
80
80
ID= --3A --5A
60
=
VGS
3A
= --
, ID
--4V
60
40
40
= --5A
0V, I D
= --1
V GS
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT13063
Ambient Temperature, Ta --
°C
IT13064
No. A0977-4/6
FW377
10
⏐
y
fs⏐ -- ID
VDS= --10V
[Pch]
Forward Transfer Admittance,
⏐
y
fs⏐ -- S
7
5
3
2
--10
7
5
3
2
--1.0
7
5
IS -- VSD
[Pch]
VGS=0V
7
5
3
2
--0.1
7
5
3
2
0.1
--0.01
2
3
5 7
--0.1
2
3
5 7
--1.0
2
3
Drain Current, ID -- A
5
3
--10
IT13065
5 7
--0.01
--0.2
--0.4
Ta=7
5
1.0
3
2
--0.6
--25
°
C
--0.8
25
°
C
°
C
°
C
25
Ta
C
5
°
--2
=
°
C
75
Source Current, IS -- A
--1.0
--1.2
IT13066
Diode Forward Voltage, VSD -- V
3
SW Time -- ID
[Pch]
VDD= --20V
VGS= --10V
2
Ciss, Coss, Crss -- VDS
Ciss
[Pch]
f=1MHz
Switching Time, SW Time -- ns
2
td(off)
100
7
5
3
2
Ciss, Coss, Crss -- pF
1000
7
5
3
tf
tr
Coss
2
td(on)
10
7
5
--0.1
2
3
5
7
--1.0
2
3
5
--10
IT13067
7
100
7
5
0
--5
--10
--15
Crss
--20
--25
--30
--35
IT13068
Drain Current, ID -- A
--10
--9
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
[Pch]
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --20A
ID= --5A
10
m
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --20V
ID= --5A
PW≤10µs
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
IT13069
10
s
Drain Current, ID -- A
10
DC
10s
op
er
ati
o
0m
0
µ
s
1m
s
s
Operation in this
area is limited by RDS(on).
n
--0.01
--0.01 2 3
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm)
1unit
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
2 3
5 7
Total Gate Charge, Qg -- nC
2.6
Allowable Power Dissipation, PD -- W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Mounted on a ceramic board (1500mm
2
✕0.8mm)
PW≤10s
Allowable Power Dissipation, PD (FET1) -- W
PD -- Ta
[Nch, Pch]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Drain-to-Source Voltage, VDS -- V
PD(FET1) -- PD(FET2)
[Nch, Pch]
IT13070
Mounted on a ceramic board (1500mm
2
✕0.8mm)
PW≤10s
To
t
1u
al
di
ss
ip
nit
ati
on
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ambient Temperature, Ta --
°C
IT13071
Allowable Power Dissipation, PD (FET2) -- W
IT13072
No. A0977-5/6
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