Datasheet> 器件分类 > 分立半导体> 二极管> CMPD7005S

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CMPD7005S: 产品描述Rectifier Diode, 2 Element, 0.1A, 500V V(RRM), Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体二极管; 文件大小113KB，共2页; 制造商Central Semiconductor

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CMPD7005S概述

Rectifier Diode, 2 Element, 0.1A, 500V V(RRM), Silicon, PLASTIC PACKAGE-3

CMPD7005S规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	PLASTIC PACKAGE-3
针数	3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
配置	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	2
端子数量	3
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	0.1 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
最大功率耗散	0.35 W
认证状态	Not Qualified
最大重复峰值反向电压	500 V
最大反向恢复时间	0.5 µs
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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LIM

CMPD7005

CMPD7005A

CMPD7005C

CMPD7005S

Central

Semiconductor Corp.

SURFACE MOUNT

VERY HIGH VOLTAGE

SILICON SWITCHING DIODE

DESCRIPTION:

The Central Semiconductor CMPD7005,

CMPD7005A, CMPD7005C and CMPD7005S

are silicon switching diodes with various diode

configurations, manufactured by the epitaxial

planar process and packaged in an epoxy

molded SOT-23 surface mount case. These

devices are designed for applications requiring

high voltage switching diodes.

SOT-23 CASE

The following configurations are available:

CMPD7005

CMPD7005A

CMPD7005C

CMPD7005S

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN SERIES

MARKING

CODE:

C7005

C705A

C705C

C705S

MAXIMUM RATINGS PER DIODE:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=1.0 µs

Forward Surge Current, tp=1.0 s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VRRM

IFRM

IFSM

TJ, Tstg

IFSM

SYMBOL

500

100

300

4.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

VR=400V

VR=400V, TA=150°C

BVR

trr

IR=1.0µA

IF=10mA

IF=50mA

IF=100mA

VR=0V, f=1.0 MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

500

MAX

100

1.0

1.2

1.4

5.0

500

UNITS

µA

R1 (8-February 2005)

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