Ordering number : ENA1111
55GN01CA
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
55GN01CA
Features
•
•
UHF Wide-band Low-noise
Amplifier Applications
High cutoff frequency : fT= 5.5GHz typ.
High gain
:
⏐S21e⏐
2
=9.5dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
3
70
200
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
2
⏐
S21e
⏐
NF
Conditions
VCB=10V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Ratings
min
typ
max
0.1
1
100
3.0
4.5
5.5
1.1
0.7
6.5
9.5
1.9
1.3
180
Unit
μA
μA
GHz
GHz
pF
pF
dB
dB
Marking : ZW
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001675 No. A1111-1/6
55GN01CA
Package Dimensions
unit : mm (typ)
7013A-009
2.9
0.1
0.5
3
2.5
1.5
0.5
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.05
1.1
0.3
50
45
IC -- VCE
A
0.30m
80
70
IC -- VBE
VCE=5V
Collector Current, IC -- mA
0.25mA
Collector Current, IC -- mA
10
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
60
50
40
30
20
10
0.20mA
0.15mA
0.10mA
0.05mA
IB=0mA
7
8
9
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT06253
Collector-to-Emitter Voltage, VCE -- V
3
IT06252
10
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
f T -- IC
VCE=5V
Gain-Bandwidth Product, f T -- GHz
VCE=5V
7
2
DC Current Gain, hFE
5
3
100
2
7
5
3
5
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100
IT06254
1.0
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100
IT07156
No. A1111-2/6
55GN01CA
5
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
5
Cre -- VCB
f=1MHz
Output Capacitance, Cob -- pF
3
3
2
2
1.0
7
5
1.0
7
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
3
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
3.0
IT05672
18
NF -- IC
Collector-to-Base Voltage, VCB -- V
⏐S21e⏐
-- IC
2
IT05673
Forward Transfer Gain,
⏐S21e⏐
-- dB
VCE=3V
f=1GHz
ZS=ZL=50Ω
VCE=5V
f=400MHz
16
Noise Figure, NF -- dB
2.5
2
14
2.0
12
10
1.5
8
1.0
1.0
2
3
5
7
Collector Current, IC -- mA
10
⏐S21e⏐
2
-- IC
10
IT05674
6
1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
240
IT07157
PC -- Ta
Forward Transfer Gain,
⏐S21e⏐
-- dB
9
8
7
6
5
4
3
VCE=5V
f=1GHz
Collector Dissipation, PC -- mW
2
3
5
7
2
3
5
7
200
2
160
120
80
40
2
1.0
0
10
100
0
20
40
60
80
100
120
140
160
Collector Current, IC -- mA
IT07158
Ambient Temperature, Ta --
°C
IT07159
No. A1111-3/6
嵌入式系统
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