Ordering number : ENA1060
TN8D41A
SANYO Semiconductors
DATA SHEET
ExPD (Excellent-Performance Power & RF Device)
TN8D41A
Features
•
•
•
•
•
•
Separately-Excited Step-Down
Switching Regulator
(5V Output type)
High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).
Over current protection (Self recovery type).
Under voltage protection.
Over temperature protection function (Self recovery type).
Soft start function (Variable subject to externally-connected capacitor).
Stand-by mode function (Compatible with soft start terminal).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Maximum Input Voltage
Maximum Output Current
Drain-to-Source Voltage of built-in MOSFET
Drain Current of built-in MOSFET (DC)
Drain Current of built-in MOSFET (Pulse)
FB Pin Maximum Input Voltage
SS Pin Maximum Input Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
Symbol
VIN max
IO max
VDSS
ID
IDP
Vfb
VSS
PD
Topr
Tj
Tstg
Tc=25°C
PW≤10μs, duty cycle≤1%
Conditions
Ratings
57
8
--60
--12
--48
7
7
2.0
20
--25 to +125
150
--55 to +150
Unit
V
A
V
A
A
V
V
W
W
°C
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908IQ MS IM TC-00001657 No. A1060-1/11
TN8D41A
Recommend Operating Conditions
Parameter
Input Voltage
Output Current
Operating Temperature Range
Symbol
VIN
IOUT
Topr rec
Ta=25°C
Ta=25°C
Conditions
Ratings
10 to 40
0 to 8
--10 to +85
Unit
V
A
°C
Electrical Characteristics
at Ta=25°C, See Specified Test Circuit
Parameter
Output Voltage
Efficiency
Drain-to-Source Breakdown Voltage
of built-in MOSFET
Drain-to-Source On Resistance
of built-in MOSFET
Switching Frequency
Maximum Duty
Line Regulation
Load Regulation
Output Voltage Temperature Coefficient *1
Over-Current-Protection-Operation
-Threshold Current
Under-Voltage-Protection-Operation
-Threshold Voltage
Under-Voltage-Protection-Operation
-Release Voltage
Under-Voltage-Protection Hysteresis Voltage
Over-Temperature-Protection-Operation
-Threshold-Current *1
Over-Temperature-Protection-Operation
-Release Temperature *1
Over-Temperature-Protection
-Hysteresis Temperature *1
SS Terminal Current
Standby Operating Voltage
Standby Current
Symbol
VOUT
η
V(BR)DSS
RDS(on)
Freq
Duty max
ΔVline
ΔVload
ΔV
O /
ΔTa
Iocp
Vuvlo on
Vuvlo off
Vuvlo hys
Ttsd on
Ttsd off
Ttsd hys
ISS
Vstb on
Istb
VIN=20V
VIN=20V
VIN=20V, VSS=0V
Conditions
VIN=20V, IOUT=3A
VIN=20V, IOUT=3A
ID=-
-1mA, VIN,GND,Vfb,VSS=0V
ISW=5A
VIN=20V, IOUT=3A
VIN=20V, Vfb=0V
VIN=20 to 40V, IOUT=3A
VIN=30V, IOUT=0.8 to 8A
VIN=20V, IOUT=3A, Ta= -
-25 to +125°C
VIN=20V
8.1
7.2
8.1
120
88
Ratings
min
4.88
typ
5.0
88
--60
80
150
92
30
45
±0.5
12
8.0
9.0
1.0
165
140
25
10
0.3
500
16
8.8
9.9
180
96
60
80
max
5.16
Unit
V
%
V
mΩ
kHz
%
mV
mV
mV /
°C
A
V
V
V
°C
°C
°C
μA
V
μA
Note: the values with "*1" are our targeted values, but not guaranteed.
Package Dimensions
unit : mm (typ)
7527-001
10.0
3.2
4.5
2.8
16.0
7.2
3.5
1.6
2.4
0.9
0.5
14.0
12.5
1
1.27
2.54
2
3
4
5
0.7
3.81
2.75
(5.9)
1 : VIN
2 : GND
3 : SWOUT
4 : FB
5 : SS
SANYO : TO-220FI5H-HB
1.27
2.54
No. A1060-2/11
TN8D41A
Forward Bias A S O
Allowable Power Dissipation, PD -- W
--100
7
5
3
2
2.5
PD -- Ta
IDP= --48A
Drain Current, ID -- A
ID= --12A
1m
10
10
ms
DC
0ms
op
era
tio
n
<10μs
10
μ
s
10
0
μ
s
s
2.0
--10
7
5
3
2
--1.0
7
5
3
2
1.5
No
he
at
sin
k
1.0
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
0.5
--0.1
--0.1
0
5 7 --10
2
3
5 7 --100
IT13084
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
25
Ambient Temperature, Ta --
°C
IT12620
PD -- Tc
Allowable Power Dissipation, PD -- W
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT12671
Specified Circuit for Electrical Characteristics
[Circuit]
L1
IC1
VIN
1 2 3 4 5
+
C1
C3
D1
C6
+
C2
R3
VOUT
GND
GND
IT12637
[Components]
Symbol
C1
C2
C3
C6
R3
L1
D1
Component
Electrolytic Capacitor
Electrolytic Capacitor
Capacitor
Ceramic Capacitor
Metal Oxide Film Resistor
Choke Coil
Schottky Barrier Diode
Specification
3000 to 3600μF
2000 to 2200μF
0.1μF
1000pF
47Ω / 2W
100μH
SBT250-06J
* When measuring ripple noise voltage, put 47μF (electrolytic capacitor) and 0.1μF (ceramic or film capacitor) into measuring point.
No. A1060-4/11
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