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HN7G01FU-A(TE85LF)

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小344KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

HN7G01FU-A(TE85LF)概述

Small Signal Bipolar Transistor

HN7G01FU-A(TE85LF)规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
Base Number Matches1

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HN7G01FU
Preliminary
TOSHIBA Multi Chip Discrete Device
HN7G01FU
Power Management Switch Application
Driver Circuit Application
Interface Circuit Application
Q1 (transistor): 2SA1955 equivalent
Q2 (MOS-FET): 2SK1830 equivalent
Unit: mm
Q1
(transistor)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−15
−12
−5
−400
−50
Unit
V
V
V
mA
mA
Q2
(MOS-FET)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
Q1, Q2 Common Ratings
(Ta
=
25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
200
125
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment
(top view)
1
2007-11-01

HN7G01FU-A(TE85LF)相似产品对比

HN7G01FU-A(TE85LF) HN7G01FU-A HN7G01FU-B
描述 Small Signal Bipolar Transistor TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal
包装说明 , SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
针数 - 6 6
ECCN代码 - EAR99 EAR99
最大集电极电流 (IC) - 0.4 A 0.4 A
集电极-发射极最大电压 - 12 V 12 V
配置 - SINGLE WITH BUILT-IN FET SINGLE WITH BUILT-IN FET
最小直流电流增益 (hFE) - 300 500
JESD-30 代码 - R-PDSO-G6 R-PDSO-G6
JESD-609代码 - e0 e2
元件数量 - 1 1
端子数量 - 6 6
最高工作温度 - 125 °C 125 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
极性/信道类型 - PNP PNP
最大功率耗散 (Abs) - 0.2 W 0.2 W
认证状态 - Not Qualified Not Qualified
表面贴装 - YES YES
端子面层 - TIN LEAD TIN SILVER
端子形式 - GULL WING GULL WING
端子位置 - DUAL DUAL
晶体管应用 - SWITCHING SWITCHING
晶体管元件材料 - SILICON SILICON

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