Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF116N10M
SFF116N10Z
1/
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF116N10 ___ ___
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
____
└
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
116 AMP , 100 Volts, 15 mΩ
Avalanche Rated N-channel
MOSFET
Features:
•
•
•
•
•
•
•
•
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Lead Option
3/
Package
3/ 4/
M = TO-254
Z = TO-254Z
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
o
@25 C.
TO-254
continuous
transient
Symbol
V
DSS
V
GS
I
D1
I
D2
I
D3
I
AR
E
AS
E
AR
P
D
T
OP
& T
STG
R
θJC
Value
100
±20
±30
55
116
80
60
2500
80
150
-55 to +175
1.0
(typ.0.75)
TO-254Z
Units
V
V
A
A
A
mJ
W
ºC
ºC /W
@ T
C
= 25ºC
@ T
C
= 25ºC
@ T
C
= 175ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0037B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF116N10M
SFF116N10Z
Symbol
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 50A, Tj= 25 C
o
V
GS
= 10V, I
D
= 50A, Tj=125 C
o
V
GS
= 10V, I
D
= 50A, Tj= 150 C
V
DS
= V
GS
, I
D
= 1.0mA, Tj= 25
o
C
o
V
DS
= V
GS
, I
D
= 1.0mA, Tj= 125 C
V
DS
= V
GS
, I
D
= 1.0mA, Tj= -55
o
C
V
GS
= ±20V, Tj= 25 C
o
V
GS
= ±20V, Tj= 125 C
V
DS
= 100V, V
GS
= 0V, T
j
= 25 C
o
V
DS
= 100V, V
GS
= 0V, T
j
= 125 C
V
DS
= 100V, V
GS
= 0V, T
j
= 175
o
C
V
DS
= 15V, I
D
= 35A, T
j
= 25
o
C
V
GS
= 12V
V
DS
= 35V
I
D
= 50A
V
GS
= 11V
V
DS
= 50V
I
D
= 35A
R
G
= 2.35Ω, pw= 3us
I
F
= 35A, V
GS
= 0V
I
F
= 50A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
o
o
o
Electrical Characteristics
5/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
Min
100
––
––
––
3.0
2.0
––
––
––
––
––
––
10
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
110
10
16
20
4.5
3.5
5.0
10
30
0.01
2.5
25
60
125
35
65
39
67
80
67
0.82
240
0.85
4800
2050
600
Max
––
15
25
––
5.0
––
6
±100
––
25
250
––
––
250
75
120
50
80
100
80
1.2
300
––
––
––
––
Units
V
mΩ
BV
DSS
R
DS(on)
Gate Threshold Voltage
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
V
nA
μA
μA
μA
Mho
nC
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nsec
V
nsec
μC
pF
Available Part Numbers:
Consult Factory
TO254 (M)
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
TO-254 (M)
Pin 1
Pin 2
Pin 3
TO-254Z (Z)
Pin 1
Pin 2
Pin 3
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0037B
DOC
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